5秒后页面跳转
25AA010A-I/P PDF预览

25AA010A-I/P

更新时间: 2024-02-26 12:32:04
品牌 Logo 应用领域
美国微芯 - MICROCHIP 存储内存集成电路光电二极管PC可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
28页 469K
描述
1K SPI Bus Serial EEPROM

25AA010A-I/P 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:4.40 MM, ROHS COMPLIANT, PLASTIC, TSSOP-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51Factory Lead Time:1 week
风险等级:5.58Is Samacsys:N
其他特性:DATA RETENTION > 200 YEARS; 1,000,000 ERASE/WRITE CYCLES最大时钟频率 (fCLK):3 MHz
数据保留时间-最小值:200耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.4 mm内存密度:1024 bit
内存集成电路类型:EEPROM内存宽度:8
湿度敏感等级:1功能数量:1
端子数量:8字数:128 words
字数代码:128工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128X8封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:SERIAL峰值回流温度(摄氏度):260
电源:2/5 V认证状态:Not Qualified
座面最大高度:1.2 mm串行总线类型:SPI
最大待机电流:0.000001 A子类别:EEPROMs
最大压摆率:0.005 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.8 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:3 mm最长写入周期时间 (tWC):5 ms
写保护:HARDWARE/SOFTWAREBase Number Matches:1

25AA010A-I/P 数据手册

 浏览型号25AA010A-I/P的Datasheet PDF文件第3页浏览型号25AA010A-I/P的Datasheet PDF文件第4页浏览型号25AA010A-I/P的Datasheet PDF文件第5页浏览型号25AA010A-I/P的Datasheet PDF文件第7页浏览型号25AA010A-I/P的Datasheet PDF文件第8页浏览型号25AA010A-I/P的Datasheet PDF文件第9页 
25AA010A/25LC010A  
After setting the write enable latch, the user may  
proceed by driving CS low, issuing a WRITEinstruction,  
followed by the remainder of the address, and then the  
data to be written. Up to 16 bytes of data can be sent to  
the device before a write cycle is necessary. The only  
restriction is that all of the bytes must reside in the  
same page. Additionally, a page address begins with  
XXXX 0000and ends with XXXX 1111. If the internal  
address counter reaches XXXX 1111and clock signals  
continue to be applied to the chip, the address counter  
will roll back to the first address of the page and over-  
write any data that previously existed in those  
locations.  
2.0  
2.1  
FUNCTIONAL DESCRIPTION  
Principles of Operation  
The 25XX010A is a 128 byte Serial EEPROM designed  
to interface directly with the Serial Peripheral Interface  
(SPI) port of many of today’s popular microcontroller  
families, including Microchip’s PICmicro® microcontrol-  
lers. It may also interface with microcontrollers that do  
not have a built-in SPI port by using discrete I/O lines  
programmed properly in firmware to match the SPI  
protocol.  
The 25XX010A contains an 8-bit instruction register.  
The device is accessed via the SI pin, with data being  
clocked in on the rising edge of SCK. The CS pin must  
be low and the HOLD pin must be high for the entire  
operation.  
Note:  
Page write operations are limited to writing  
bytes within a single physical page,  
regardless of the number of bytes  
actually being written. Physical page  
boundaries start at addresses that are  
integer multiples of the page buffer size (or  
‘page size’) and, end at addresses that are  
integer multiples of page size – 1. If a  
Page Write command attempts to write  
across a physical page boundary, the  
result is that the data wraps around to the  
beginning of the current page (overwriting  
data previously stored there), instead of  
being written to the next page as might be  
expected. It is therefore necessary for the  
application software to prevent page write  
operations that would attempt to cross a  
page boundary.  
Table 2-1 contains a list of the possible instruction  
bytes and format for device operation. All instructions,  
addresses, and data are transferred MSb first, LSb last.  
Data (SI) is sampled on the first rising edge of SCK  
after CS goes low. If the clock line is shared with other  
peripheral devices on the SPI bus, the user can assert  
the HOLD input and place the 25XX010A in ‘HOLD’  
mode. After releasing the HOLD pin, operation will  
resume from the point when the HOLD was asserted.  
2.2  
Read Sequence  
The device is selected by pulling CS low. The 8-bit  
READ instruction is transmitted to the 25XX010A  
followed by an 8-bit address. See Figure 2-1 for more  
details.  
For the data to be actually written to the array, the CS  
must be brought high after the Least Significant bit (D0)  
of the nth data byte has been clocked in. If CS is driven  
high at any other time, the write operation will not be  
completed. Refer to Figure 2-2 and Figure 2-3 for more  
detailed illustrations on the byte write sequence and  
the page write sequence, respectively. While the write  
is in progress, the STATUS register may be read to  
check the status of the WIP, WEL, BP1 and BP0 bits  
(Figure 2-6). Attempting to read a memory array  
location will not be possible during a write cycle. Polling  
the WIP bit in the STATUS register is recommended in  
order to determine if a write cycle is in progress. When  
the write cycle is completed, the write enable latch is  
reset.  
After the correct READinstruction and address are sent,  
the data stored in the memory at the selected address  
is shifted out on the SO pin. Data stored in the memory  
at the next address can be read sequentially by  
continuing to provide clock pulses to the slave. The  
internal Address Pointer automatically increments to  
the next higher address after each byte of data is  
shifted out. When the highest address is reached  
(7Fh), the address counter rolls over to address 00h  
allowing the read cycle to be continued indefinitely. The  
read operation is terminated by raising the CS pin  
(Figure 2-1).  
2.3  
Write Sequence  
Prior to any attempt to write data to the 25XX010A, the  
write enable latch must be set by issuing the WREN  
instruction (Figure 2-4). This is done by setting CS low  
and then clocking out the proper instruction into the  
25XX010A. After all eight bits of the instruction are  
transmitted, CS must be driven high to set the write  
enable latch. If the write operation is initiated immedi-  
ately after the WRENinstruction without CS driven high,  
data will not be written to the array since the write  
enable latch was not properly set.  
DS21832C-page 6  
Preliminary  
© 2006 Microchip Technology Inc.  

与25AA010A-I/P相关器件

型号 品牌 描述 获取价格 数据表
25AA010A-I/SN MICROCHIP 1K SPI Bus Serial EEPROM

获取价格

25AA010A-I/ST MICROCHIP 1K SPI Bus Serial EEPROM

获取价格

25AA010AT-E/MC MICROCHIP 1K SPI Bus Serial EEPROM

获取价格

25AA010AT-E/MS MICROCHIP 1K SPI Bus Serial EEPROM

获取价格

25AA010AT-E/OT MICROCHIP 1K SPI Bus Serial EEPROM

获取价格

25AA010AT-E/P MICROCHIP 1K SPI Bus Serial EEPROM

获取价格