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25AA010A-I/P PDF预览

25AA010A-I/P

更新时间: 2024-02-01 12:01:36
品牌 Logo 应用领域
美国微芯 - MICROCHIP 存储内存集成电路光电二极管PC可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
28页 469K
描述
1K SPI Bus Serial EEPROM

25AA010A-I/P 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:4.40 MM, ROHS COMPLIANT, PLASTIC, TSSOP-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51Factory Lead Time:1 week
风险等级:5.58Is Samacsys:N
其他特性:DATA RETENTION > 200 YEARS; 1,000,000 ERASE/WRITE CYCLES最大时钟频率 (fCLK):3 MHz
数据保留时间-最小值:200耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.4 mm内存密度:1024 bit
内存集成电路类型:EEPROM内存宽度:8
湿度敏感等级:1功能数量:1
端子数量:8字数:128 words
字数代码:128工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128X8封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:SERIAL峰值回流温度(摄氏度):260
电源:2/5 V认证状态:Not Qualified
座面最大高度:1.2 mm串行总线类型:SPI
最大待机电流:0.000001 A子类别:EEPROMs
最大压摆率:0.005 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.8 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:3 mm最长写入周期时间 (tWC):5 ms
写保护:HARDWARE/SOFTWAREBase Number Matches:1

25AA010A-I/P 数据手册

 浏览型号25AA010A-I/P的Datasheet PDF文件第6页浏览型号25AA010A-I/P的Datasheet PDF文件第7页浏览型号25AA010A-I/P的Datasheet PDF文件第8页浏览型号25AA010A-I/P的Datasheet PDF文件第10页浏览型号25AA010A-I/P的Datasheet PDF文件第11页浏览型号25AA010A-I/P的Datasheet PDF文件第12页 
25AA010A/25LC010A  
The following is a list of conditions under which the  
write enable latch will be reset:  
2.4  
Write Enable (WREN) and Write  
Disable (WRDI)  
• Power-up  
The 25XX010A contains a write enable latch. See  
Table 2-4 for the Write-Protect Functionality Matrix.  
This latch must be set before any write operation will be  
completed internally. The WRENinstruction will set the  
latch, and the WRDIwill reset the latch.  
WRDIinstruction successfully executed  
WRSRinstruction successfully executed  
WRITEinstruction successfully executed  
• WP pin is brought low  
FIGURE 2-4:  
WRITE ENABLE SEQUENCE (WREN)  
CS  
SCK  
SI  
0
1
2
3
4
5
6
7
0
0
0
0
0
1
1
0
high-impedance  
SO  
FIGURE 2-5:  
WRITE DISABLE SEQUENCE (WRDI)  
CS  
0
1
2
3
4
5
6
7
SCK  
0
0
0
0
0
0
1
0
SI  
high-impedance  
SO  
© 2006 Microchip Technology Inc.  
Preliminary  
DS21832C-page 9  

25AA010A-I/P 替代型号

型号 品牌 替代类型 描述 数据表
25AA010AT-I/OT MICROCHIP

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