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25AA010AT-I/MNY PDF预览

25AA010AT-I/MNY

更新时间: 2024-01-02 21:18:18
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
38页 969K
描述
25AA010AT-I/MNY

25AA010AT-I/MNY 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.59
数据保留时间-最小值:200耐久性:1000000 Write/Erase Cycles
JESD-30 代码:R-PDSO-N8JESD-609代码:e4
内存密度:1024 bit内存集成电路类型:EEPROM
内存宽度:8端子数量:8
字数:128 words字数代码:128
最高工作温度:85 °C最低工作温度:-40 °C
组织:128X8封装主体材料:PLASTIC/EPOXY
封装代码:SON封装等效代码:SOLCC8,.11,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
并行/串行:SERIAL电源:2/5 V
认证状态:Not Qualified串行总线类型:SPI
最大待机电流:0.000001 A子类别:EEPROMs
最大压摆率:0.005 mA表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:NO LEAD
端子节距:0.5 mm端子位置:DUAL
写保护:HARDWARE/SOFTWAREBase Number Matches:1

25AA010AT-I/MNY 数据手册

 浏览型号25AA010AT-I/MNY的Datasheet PDF文件第2页浏览型号25AA010AT-I/MNY的Datasheet PDF文件第3页浏览型号25AA010AT-I/MNY的Datasheet PDF文件第4页浏览型号25AA010AT-I/MNY的Datasheet PDF文件第5页浏览型号25AA010AT-I/MNY的Datasheet PDF文件第6页浏览型号25AA010AT-I/MNY的Datasheet PDF文件第7页 
25AA010A/25LC010A  
1K SPI Bus Serial EEPROM  
Device Selection Table  
Part Number  
VCC Range  
Page Size  
Temp. Ranges  
Packages  
25AA010A  
25LC010A  
1.8-5.5V  
2.5-5.5V  
16 Bytes  
16 Bytes  
I
P, MS, SN, ST, MN, MC, OT  
P, MS, SN, ST, MN, MC, OT  
I, E  
Features:  
Description:  
• 10 MHz max. Clock Frequency  
• Low-Power CMOS Technology:  
- Max. Write Current: 5 mA at 5.5V, 10 MHz  
- Read Current: 5 mA at 5.5V, 10 MHz  
- Standby Current: 5 A at 5.5V  
• 128 x 8-bit Organization  
The Microchip Technology Inc. 25XX010A* is a 1 Kbit  
Serial Electrically Erasable Programmable Read-Only  
Memory (EEPROM). The memory is accessed via a  
simple Serial Peripheral Interface (SPI) compatible  
serial bus. The bus signals required are a clock input  
(SCK) plus separate data in (SI) and data out (SO)  
lines. Access to the device is controlled through a Chip  
Select (CS) input.  
• Write Page mode (up to 16 bytes)  
• Sequential Read  
Communication to the device can be paused via the  
hold pin (HOLD). While the device is paused,  
transitions on its inputs will be ignored, with the  
exception of Chip Select, allowing the host to service  
higher priority interrupts.  
• Self-Timed Erase and Write Cycles (5 ms max.)  
• Block Write Protection:  
- Protect none, 1/4, 1/2 or all of array  
• Built-In Write Protection:  
The 25XX010A is available in standard packages  
including 8-lead PDIP and SOIC, and advanced  
packages including 8-lead MSOP, 8-lead TSSOP and  
rotated TSSOP, 8-lead 2x3 DFN and TDFN, and 6-lead  
SOT-23.  
- Power-on/off data protection circuitry  
- Write enable latch  
- Write-protect pin  
• High Reliability:  
- Endurance: 1,000,000 Erase/Write cycles  
- Data retention: > 200 years  
- ESD protection: > 4000V  
Package Types (not to scale)  
PDIP/SOIC  
TSSOP/MSOP  
(P, SN)  
(ST, MS)  
Temperature Ranges Supported:  
CS  
SO  
WP  
VCC  
1
2
3
4
8
7
6
5
- Industrial (I):  
- Automotive (E):  
-40C to +85C  
-40C to +125C  
1
2
3
4
8
7
6
5
CS  
SO  
WP  
V
CC  
HOLD  
SCK  
SI  
HOLD  
SCK  
SI  
VSS  
• Pb-Free and RoHS Compliant  
VSS  
Pin Function Table  
DFN/TDFN  
(MC, MN)  
SOT-23  
(OT)  
Name  
Function  
1
2
3
4
V
CC  
HOLD  
SCK  
SI  
8
7
6
5
1
2
3
6
5
4
CS  
SO  
SCK  
V
DD  
CS  
SO  
Chip Select Input  
Serial Data Output  
Write-Protect  
VSS  
CS  
SO  
WP  
SI  
VSS  
WP  
VSS  
SI  
Ground  
X-Rotated TSSOP  
(X/ST)  
Serial Data Input  
Serial Clock Input  
Hold Input  
1
2
3
4
8
7
6
5
HOLD  
SCK  
SI  
VSS  
WP  
SCK  
HOLD  
VCC  
VCC  
CS  
SO  
Supply Voltage  
*25XX010A is used in this document as a generic part number  
for the 25AA010A and the 25LC010A.  
2003-2012 Microchip Technology Inc.  
DS21832H-page 1  

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