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24LC08BT/SN101 PDF预览

24LC08BT/SN101

更新时间: 2024-10-26 14:39:19
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
页数 文件大小 规格书
20页 355K
描述
1K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 0.150 INCH, PLASTIC, SOIC-8

24LC08BT/SN101 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOIC
包装说明:0.150 INCH, PLASTIC, SOIC-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.21
最大时钟频率 (fCLK):0.4 MHzJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.9 mm
内存密度:8192 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:1
功能数量:1端子数量:8
字数:1024 words字数代码:1000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:1KX8
输出特性:OPEN-DRAIN封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:1.75 mm串行总线类型:I2C
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2.5 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:3.9 mm
最长写入周期时间 (tWC):5 msBase Number Matches:1

24LC08BT/SN101 数据手册

 浏览型号24LC08BT/SN101的Datasheet PDF文件第2页浏览型号24LC08BT/SN101的Datasheet PDF文件第3页浏览型号24LC08BT/SN101的Datasheet PDF文件第4页浏览型号24LC08BT/SN101的Datasheet PDF文件第5页浏览型号24LC08BT/SN101的Datasheet PDF文件第6页浏览型号24LC08BT/SN101的Datasheet PDF文件第7页 
24LC04B/08B  
M
4K/8K 2.5 I2C™ Serial EEPROMs  
FEATURES  
PACKAGE TYPES  
• Single supply with operation down to 2.5V  
• Low power CMOS technology  
PDIP, SOIC  
A0  
A1  
A2  
1
2
3
8
7
6
VCC  
WP  
- 1 mA active current typical  
- 10 µA standby current typical at 5.5V  
- 5 µA standby current typical at 3.0V  
• Organized as two or four blocks of 256 bytes  
(2 x 256 x 8) and (4 x 256 x 8)  
SCL  
SDA  
Vss  
4
5
• 2-wire serial interface bus, I2C™ compatible  
• Schmitt trigger, filtered inputs for noise  
suppression  
TSSOP  
MSOP  
1
2
3
4
8
7
6
5
A0  
A1  
VCC  
• Output slope control to eliminate ground bounce  
WP  
• 100 kHz (E-temp) and 400 kHz (C/I-temp.)  
compatibility  
A2  
SCL  
SDA  
• Self-timed write cycle (including auto-erase)  
• Page-write buffer for up to 16 bytes  
• 2 ms typical write cycle time for page-write  
• Hardware write protect for entire memory  
• Can be operated as a serial ROM  
• Factory programming (QTP) available  
• ESD protection > 4,000V  
VSS  
1
2
3
4
8
A0  
A1  
A2  
VCC  
7
6
5
WP  
SCL  
SDA  
VSS  
• 1,000,000 erase/write cycles ensured  
• Data retention > 200 years  
Note: A0, A1 and A2 are not used  
• 8-pin DIP, 8-lead SOIC, 8-pin TSSOP packages  
• Available temperature ranges:  
- Commercial (C):  
- Industrial (I):  
- Automotive (E):  
0°C to  
-40°C to  
-40°C to +125°C  
+70°C  
+85°C  
BLOCK DIAGRAM  
WP  
DESCRIPTION  
HV GENERATOR  
The Microchip Technology Inc. 24LC04B/08B is a 4  
Kbit or 8 Kbit Electrically Erasable PROM (EEPROM).  
The device is organized as two or four blocks of 256 x  
8-bit memory with a 2-wire serial interface. Low voltage  
design permits operation down to 2.5 volts with typical  
standby and active currents of only 5 µA and 1 mA  
respectively. The 24LC04B/08B also has a page-write  
capability for up to 16 bytes of data. The 24LC04B/08B  
is available in the standard 8-pin DIP, 8-lead surface  
mount SOIC, MSOP and TSSOP packages.  
I/O  
CONTROL  
LOGIC  
MEMORY  
CONTROL  
LOGIC  
EEPROM ARRAY  
(2 x 256 x 8) or  
(4 x 256 x 8)  
XDEC  
PAGE LATCHES  
SDA  
SCL  
YDEC  
VCC  
VSS  
SENSE AMP  
R/W CONTROL  
2001 Microchip Technology Inc.  
DS21051H-page 1  

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