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24LC08BT-E/ST PDF预览

24LC08BT-E/ST

更新时间: 2024-10-25 22:44:59
品牌 Logo 应用领域
美国微芯 - MICROCHIP 存储内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
26页 368K
描述
8K IC SERIAL EEPROM

24LC08BT-E/ST 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TSSOP
包装说明:4.40 MM, ROHS COMPLIANT, PLASTIC, MO-153, TSSOP-8针数:8
Reach Compliance Code:compliantFactory Lead Time:14 weeks
风险等级:5.47Is Samacsys:N
最大时钟频率 (fCLK):0.4 MHz数据保留时间-最小值:200
耐久性:1000000 Write/Erase CyclesI2C控制字节:1010XMMR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
长度:4.4 mm内存密度:8192 bit
内存集成电路类型:EEPROM内存宽度:8
湿度敏感等级:1功能数量:1
端子数量:8字数:1024 words
字数代码:1000工作模式:SYNCHRONOUS
最高工作温度:125 °C最低工作温度:-40 °C
组织:1KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
并行/串行:SERIAL峰值回流温度(摄氏度):260
电源:3/5 V认证状态:Not Qualified
座面最大高度:1.2 mm串行总线类型:I2C
最大待机电流:0.000005 A子类别:EEPROMs
最大压摆率:0.003 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):2.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:3 mm最长写入周期时间 (tWC):5 ms
写保护:HARDWAREBase Number Matches:1

24LC08BT-E/ST 数据手册

 浏览型号24LC08BT-E/ST的Datasheet PDF文件第2页浏览型号24LC08BT-E/ST的Datasheet PDF文件第3页浏览型号24LC08BT-E/ST的Datasheet PDF文件第4页浏览型号24LC08BT-E/ST的Datasheet PDF文件第5页浏览型号24LC08BT-E/ST的Datasheet PDF文件第6页浏览型号24LC08BT-E/ST的Datasheet PDF文件第7页 
24AA08/24LC08B  
8K I2CSerial EEPROM  
Description:  
Device Selection Table  
The Microchip Technology Inc. 24AA08/24LC08B  
(24XX08*) is a 8 Kbit Electrically Erasable PROM. The  
device is organized as four blocks of 256 x 8-bit  
memory with a 2-wire serial interface. Low voltage  
design permits operation down to 1.8V, with standby  
and active currents of only 1 μA and 1 mA,  
Part  
Number  
VCC  
Range  
Max Clock  
Frequency  
Temp  
Ranges  
24AA08  
1.8-5.5  
2.5-5.5  
400 kHz(1)  
400 kHz  
I
24LC08B  
I, E  
Note 1: 100 kHz for VCC <2.5V  
respectively. The 24XX08 also has a page write  
capability for up to 16 bytes of data. The 24XX08 is  
available in the standard 8-pin PDIP, surface mount  
SOIC, TSSOP, 2x3 DFN and MSOP packages, and is  
also available in the 5-lead SOT-23 package.  
Features:  
• Single supply with operation down to 1.8V  
• Low-power CMOS technology:  
- 1 mA active current, typical  
Block Diagram  
- 1 μA standby current, typical (I-temp)  
• Organized as 4 blocks of 256 bytes (4 x 256 x 8)  
• 2-wire serial interface bus, I2C™ compatible  
• Schmitt Trigger inputs for noise suppression  
• Output slope control to eliminate ground bounce  
• 100 kHz (<2.5V) and 400 kHz (2.5V) compatibility  
• Self-timed write cycle (including auto-erase)  
• Page write buffer for up to 16 bytes  
• 2 ms typical write cycle time for page write  
• Hardware write-protect for entire memory  
• Can be operated as a serial ROM  
HV  
Generator  
WP  
I/O  
Control  
Logic  
Memory  
Control  
Logic  
EEPROM  
Array  
XDEC  
Page  
Latches  
I/O  
SCL  
YDEC  
SDA  
• Factory programming (QTP) available  
• ESD protection > 4,000V  
Sense Amp.  
R/W Control  
VCC  
VSS  
• 1,000,000 erase/write cycles  
Package Types  
• Data retention > 200 years  
SOIC, TSSOP  
• 8-lead PDIP, SOIC, TSSOP, DFN and MSOP  
packages  
PDIP, MSOP  
A0  
1
8
VCC  
1
8
7
6
5
A0  
A1  
A2  
VCC  
WP  
• 5-lead SOT-23 package  
2
3
4
A1  
A2  
2
3
4
7
6
5
WP  
• Standard and Pb-free finishes available  
• Available for extended temperature ranges:  
- Industrial (I): -40°C to +85°C  
SCL  
SCL  
SDA  
VSS  
SDA VSS  
- Automotive (E): -40°C to +125°C  
SOT-23-5  
DFN  
1
VCC  
WP  
A0  
8
7
6
5
WP  
Vcc  
1
5
4
SCL  
2
3
4
A1  
SCL  
SDA  
2
3
A2  
VSS  
Vss  
SDA  
Note:  
Pins A0, A1 and A2 are not used by the 24XX08. (No  
internal connections).  
*24XX08 is used in this document as a generic part  
number for the 24AA08/24LC08B devices.  
© 2005 Microchip Technology Inc.  
DS21710D-page 1  

24LC08BT-E/ST 替代型号

型号 品牌 替代类型 描述 数据表
24LC08B-E/ST MICROCHIP

完全替代

8K IC SERIAL EEPROM

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