Datasheet > 1SV287

1SV287

更新时间： 2024-11-12 05:57:03

品牌	Logo	应用领域
科信 - KEXIN		二极管测试光电二极管
页数	文件大小	规格书
1页	34K
描述
Silicon Epitaxial Planar Diode

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中文翻译

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数据手册

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1SV287 数据手册

SMD Type

Diodes

Silicon Epitaxial Planar Diode

1SV287

SOD-323

Unit: mm

+0.1

1.7

-0.1

+0.05

0.85

-0.05

Features

+0.1

2.6

-0.1

High Capacitance Ratio:C2V/C25V = 7.6(Typ.)

Low Series Resistance:rs = 1.9 (Typ.)

Excellent C-V Characteristics,and Small Tracking Error.

Useful for small size Tuner.

1.0max

0.475

0.375

Absolute Maximum Ratings Ta = 25

Parameter

Reverse Voltage

Symbol

V^R

Value

Unit

Peak Reverse Voltage

Junction Temperature

Storage Temperature Range

V^RM

T^j

35(RL = 10 K

125

)

Tstg

-55 to +125

Electrical Characteristics Ta = 25

Parameter

Reverse Voltage

Symbol

V^R

Conditions

Min

Typ

Max

Unit

IR = 1

Reverse Current

Capacitance

VR = 28 V

5.7

C^2V

f = 1 MHz;VR = 2 V

f = 1 MHz;VR = 25 V

4.2

0.53

7.3

C^25V

C^2V/C25V

0.68

Capacitance Ratio

Series Resistance

Note :

VR = 1V, f = 470 MHz

1.9

2.3

Available in matched group for capacitance to 6%.

C(Max.)-C(Min.)

0.06

C(Min.)

(V^R=2~25V)

Marking

www.kexin.com.cn

中文翻译

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