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1SV290B(TPH3)

更新时间: 2024-02-24 13:28:42
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东芝 - TOSHIBA /
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描述
1SV290B(TPH3)

1SV290B(TPH3) 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.84
Base Number Matches:1

1SV290B(TPH3) 数据手册

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1SV290B  
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type  
1SV290B  
CATV Tuning  
Unit: mm  
High capacitance ratio: C /C  
= 16 (typ.)  
2 V 25 V  
Low series resistance: r = 0.92 (typ.)  
s
Excellent C-V characteristics, and small tracking error.  
Suitable for small tuners  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Reverse voltage  
Symbol  
Rating  
30  
Unit  
V
V
V
R
Peak reverse voltage  
Junction temperature  
Storage temperature range  
V
35 (R = 10 kΩ)  
RM  
L
T
j
125  
°C  
°C  
T
stg  
55~125  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
TOSHIBA  
1-1G1A  
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate, etc).  
Weight: 0.0014 g (typ.)  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Reverse voltage  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
I
= 1 μA  
R
30  
10  
V
R
Reverse current  
Capacitance  
I
V
V
V
= 28 V  
nA  
pF  
pF  
Ω
R
R
R
R
C
= 2 V, f = 1 MHz  
= 25 V, f = 1 MHz  
41  
45  
49.5  
3.2  
2 V  
Capacitance  
C
2.5  
14.8  
2.8  
16  
25 V  
/C  
Capacitance ratio  
Series resistance  
C
2 V 25 V  
r
s
V
= 5 V, f = 470 MHz  
0.92  
1.05  
R
Note 1: Available in matched group for capacitance to 2%.  
C (max) C (min)  
<
0.02  
=
C (min)  
(V = 2~25 V)  
R
Marking  
1
2007-11-01  

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