1SV290B
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV290B
CATV Tuning
Unit: mm
•
•
•
•
High capacitance ratio: C /C
= 16 (typ.)
2 V 25 V
Low series resistance: r = 0.92 Ω (typ.)
s
Excellent C-V characteristics, and small tracking error.
Suitable for small tuners
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage
Symbol
Rating
30
Unit
V
V
V
R
Peak reverse voltage
Junction temperature
Storage temperature range
V
35 (R = 10 kΩ)
RM
L
T
j
125
°C
°C
T
stg
−55~125
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
JEDEC
JEITA
―
―
TOSHIBA
1-1G1A
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Weight: 0.0014 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Reverse voltage
Symbol
Test Condition
Min
Typ.
Max
Unit
V
I
= 1 μA
R
30
⎯
⎯
⎯
⎯
10
V
R
Reverse current
Capacitance
I
V
V
V
= 28 V
nA
pF
pF
⎯
Ω
R
R
R
R
C
= 2 V, f = 1 MHz
= 25 V, f = 1 MHz
⎯
41
45
49.5
3.2
⎯
2 V
Capacitance
C
2.5
14.8
⎯
2.8
16
25 V
/C
Capacitance ratio
Series resistance
C
2 V 25 V
r
s
V
= 5 V, f = 470 MHz
0.92
1.05
R
Note 1: Available in matched group for capacitance to 2%.
C (max) − C (min)
<
0.02
C (min)
(V = 2~25 V)
R
Marking
1
2007-11-01