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1SV302

更新时间: 2024-11-12 06:21:47
品牌 Logo 应用领域
科信 - KEXIN 二极管测试光电二极管
页数 文件大小 规格书
1页 34K
描述
Silicon Epitaxial Planar Diode

1SV302 数据手册

  
SMD Type  
Diodes  
Silicon Epitaxial Planar Diode  
1SV302  
SOD-323  
Unit: mm  
+0.1  
1.7  
-0.1  
+0.05  
0.85  
-0.05  
Features  
+0.1  
2.6  
-0.1  
High Capacitance Ratio:C2V/C25V=17.5(Typ.)  
Low Series Resistance:rs=1.05 (Typ.)  
Useful for Small Size Tuner  
1.0max  
0.475  
0.375  
Absolute Maximum Ratings Ta = 25  
Parameter  
Reverse Voltage  
Symbol  
VR  
Value  
30  
Unit  
V
Peak Reverse Voltage  
Junction Temperature  
Storage Temperature Range  
VRM  
Tj  
V
35(RL = 10K  
125  
)
Tstg  
-55 to +125  
Electrical Characteristics Ta = 25  
Parameter  
Reverse Voltage  
Symbol  
VR  
Conditions  
Min  
30  
Typ  
Max  
Unit  
V
IR = 1  
A
Reverse Current  
Capacitance  
IR  
VR = 28 V  
10  
51  
nA  
C2V  
f = 1 MHz;VR = 2 V  
f = 1 MHz;VR = 25 V  
42  
2.1  
17  
47  
pF  
C25V  
C2V/C25V  
rs  
2.6  
3.1  
Capacitance Ratio  
Series Resistance  
Note :  
17.5  
1.05  
VR = 5V, f = 470 MHz  
1.25  
Available in matched group for capacitance to 2.5%.  
C(Max.)-C(Min.)  
0.025  
C(Min.)  
(VR=2~25V)  
Marking  
Marking  
TT  
1
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