Datasheet > 1SV308(TPL3)

1SV308(TPL3)

更新时间： 2024-02-16 00:23:42

品牌	Logo	应用领域
东芝 - TOSHIBA		测试二极管
页数	文件大小	规格书
3页	128K
描述
PIN DIODE,SINGLE,30V V(BR),EMD2VAR

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技术参数
数据手册

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1SV308(TPL3) 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.85	最小击穿电压：	30 V
标称二极管电容：	0.3 pF	最大二极管正向电阻：	1.5 Ω
二极管电阻测试电流：	10 mA	二极管电阻测试频率：	100 MHz
二极管类型：	PIN DIODE	最高工作温度：	125 °C
反向测试电压：	1 V	子类别：	PIN Diodes
表面贴装：	YES	Base Number Matches：	1

1SV308(TPL3) 数据手册

1SV308

TOSHIBA Diode Silicon Epitaxial Pin Type

1SV308

VHF Tuner Band Switch Applications

Unit: mm

•

Small package.

Low series resistance: r = 1.1 Ω (typ.)

Small total capacitance: C = 0.3 pF (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Reverse voltage

Symbol

Rating

Unit

Forward current

°C

Junction temperature

Storage temperature range

125

stg

−55~125

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

TOSHIBA

1-1G1A

Weight: 0.0014 g (typ.)

Electrical Characteristics (Ta = 25°C)

Characteristics

Reverse voltage

Symbol

Test Condition

Min

Typ.

Max

Unit

= 10 μA

⎯

0.1

1.0

0.5

1.5

⎯

μA

Reverse current

V = 30 V

Forward voltage

Total capacitance

Series resistance 1

Series resistance 2

= 50 mA

0.95

0.3

1.0

1.1

= 1 V, f = 1 MHz

= 10 mA, f = 100 MHz

= 10 mA, f = 1.5 GHz

s (1)

s (2)

Marking

2007-11-01

12 3

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