1SV309
TOSHIBA Diode Silicon Epitaxial Planar Type
1SV309
UHF SHF Tuning
Unit: mm
•
•
•
•
High capacitance ratio: C /C
= 5.7 (typ.)
2 V 25 V
Low series resistance: r = 1.2 Ω (typ.)
s
Excellent C-V characteristics, and small tracking error.
Useful for small size tuner.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage
Symbol
Rating
30
Unit
V
V
V
R
Peak reverse voltage
Junction temperature
Storage temperature range
V
35 (R = 10 kΩ)
RM
L
T
j
125
°C
°C
T
stg
−55~125
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
JEDEC
JEITA
―
―
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
TOSHIBA
1-1G1A
Weight: 0.0014 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Reverse voltage
Symbol
Test Condition
Min
Typ.
Max
Unit
V
I
= 1 μA
R
30
⎯
⎯
⎯
⎯
⎯
⎯
1.2
⎯
10
V
R
Reverse current
Capacitance
I
V
V
V
= 28 V
nA
pF
pF
⎯
Ω
R
R
R
R
C
= 2 V, f = 1 MHz
= 25 V, f = 1 MHz
⎯
3.31
0.61
5.0
⎯
4.55
0.77
6.5
2 V
Capacitance
C
25 V
/C
Capacitance ratio
Series resistance
C
2 V 25 V
r
s
V
= 1 V, f = 470 MHz
2.0
R
Note 1: Unites are compounded in one package and are matched to 6.0%.
C (max) − C (min)
<
0.06
C (min)
(V = 2 to 25 V)
R
Marking
1
2007-11-01