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1SV257 PDF预览

1SV257

更新时间: 2024-11-23 02:55:07
品牌 Logo 应用领域
东芝 - TOSHIBA 二极管变容二极管测试光电二极管
页数 文件大小 规格书
2页 275K
描述
Variable Capacitance Diode Silicon Epitaxial Planar Type VCO For UHF Ratio

1SV257 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:SOD包装说明:R-PDSO-G2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.91Is Samacsys:N
最小击穿电压:15 V配置:SINGLE
最小二极管电容比:2标称二极管电容:15 pF
二极管元件材料:SILICON二极管类型:VARIABLE CAPACITANCE DIODE
频带:ULTRA HIGH FREQUENCYJESD-30 代码:R-PDSO-G2
JESD-609代码:e0元件数量:1
端子数量:2最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大反向电流:0.003 µA
反向测试电压:15 V表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1SV257 数据手册

 浏览型号1SV257的Datasheet PDF文件第2页 
TOSHIBA  
Discrete Semiconductors  
1SV257  
Variable Capacitance Diode  
Silicon Epitaxial Planar Type  
VCO For UHF Ratio  
Features  
Unit in mm  
• Ultra Low Series Resistance : r = 0.2(Typ.)  
s
• Useful for Small Size Set  
Absolute Maximum Ratings (Ta = 25°C)  
CHARACTERISTIC  
Reverse Voltage  
SYMBOL RATING  
UNIT  
V
V
15  
125  
R
Junction Temperature  
T
°C  
j
Storage Temperature Range  
T
-55 ~ 125  
°C  
stg  
Electrical Characteristics (Ta = 25°C)  
CHARACTERISTIC SYMBOL TEST CONDITION  
Reverse Voltage I = 1µA  
MIN.  
TYP.  
MAX.  
UNIT  
V
15  
3
V
nA  
pF  
pF  
R
R
Reverse Current  
Capacitance  
I
V = 15V  
R
R
C2V  
C10V  
V = 2V, f = 1MHz  
14  
5.5  
2.0  
15  
6
16  
6.5  
R
Capacitance  
V = 10V, f = 1MHz  
R
Capacitance Ratio  
Series Resistance  
C2V/C10V  
2.5  
0.2  
r
V = 5V, f = 470MHz  
0.4  
s
R
Marking  
TOSHIBA CORPORATION  
1/2  

1SV257 替代型号

型号 品牌 替代类型 描述 数据表
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