Datasheet > 1SV239_07

1SV239_07

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
3页	272K
描述
VCO for UHF Radio

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1SV239_07 数据手册

1SV239

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type

1SV239

VCO for UHF Radio

Unit: mm

•

Ultra low series resistance: r = 0.44 Ω (typ.)

Useful for small size set

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Reverse voltage

Symbol

Rating

Unit

125

Junction temperature

°C

Storage temperature range

stg

−55~125

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

TOSHIBA

1-1E1A

Weight: 0.004 g (typ.)

Electrical Characteristics (Ta = 25°C)

Characteristics

Reverse voltage

Symbol

Test Condition

Min

Typ.

Max

Unit

= 1 μA

⎯

Reverse current

Capacitance

= 15 V

⎯

= 2 V, f = 1 MHz

= 10 V, f = 1 MHz

⎯

3.8

1.5

2.0

⎯

4.25

1.75

2.4

4.7

2.0

⎯

2 V

Capacitance

10 V

Capacitance ratio

Series resistance

2 V 10 V

= 1 V, f = 470 MHz

0.44

0.6

Marking

2007-11-01

12 3

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