Datasheet > 1SV245_07

1SV245_07

更新时间： 2024-02-21 23:26:12

品牌	Logo	应用领域
东芝 - TOSHIBA		二极管变容二极管
页数	文件大小	规格书
3页	293K
描述
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type

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1SV245_07 数据手册

1SV245

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type

1SV245

UHF SHF Tuning

Unit: mm

•

High capacitance ratio: C2 V/C25 V = 5.7 (typ.)

Low series resistance: rs = 1.2 Ω (typ.)

Excellent C-V characteristics, and small tracking error.

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Reverse voltage

Symbol

Rating

Unit

Peak reverse voltage

Junction temperature

Storage temperature range

35 (R = 10 kΩ)

125

°C

stg

−55~125

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

TOSHIBA

1-1E1A

Weight: 0.004 g (typ.)

Electrical Characteristics (Ta = 25°C)

Characteristics

Reverse voltage

Symbol

Test Condition

Min

Typ.

Max

Unit

= 1 μA

⎯

Reverse current

Capacitance

= 28 V

⎯

C2 V

C25 V

= 2 V, f = 1 MHz

= 25 V, f = 1 MHz

⎯

3.31

0.61

5.0

⎯

4.55

0.77

6.5

Capacitance

⎯

Capacitance ratio

Series resistance

C2 V/C25 V

5.7

1.2

= 1 V, f = 470 MHz

2.0

Note 1: Unites are compounded in one package and are matched to 6.0%.

C (max) − C (min)

0.06 (VR = 2~25 V)

C (min)

Marking

2007-11-01

12 3

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