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1SV245TPHR4 PDF预览

1SV245TPHR4

更新时间： 2024-09-23 14:46:11
品牌 Logo 应用领域
东芝 - TOSHIBA 测试光电二极管
页数 文件大小 规格书
3页 187K
描述
DIODE UHF BAND, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode

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中文翻译

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1SV245TPHR4 技术参数

生命周期：End Of Life包装说明：R-PDSO-G2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.68
Is Samacsys：N其他特性：SMALL TRACKING ERROR, 6% MATCHED SETS ARE AVAILABLE
最小击穿电压：30 V配置：SINGLE
最小二极管电容比：5二极管元件材料：SILICON
二极管类型：VARIABLE CAPACITANCE DIODE频带：ULTRA HIGH FREQUENCY
JESD-30 代码：R-PDSO-G2元件数量：1
端子数量：2最高工作温度：125 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE认证状态：Not Qualified
最大反向电流：0.01 µA反向测试电压：28 V
表面贴装：YES端子形式：GULL WING
端子位置：DUALBase Number Matches：1

1SV245TPHR4 数据手册

 浏览型号1SV245TPHR4的Datasheet PDF文件第2页浏览型号1SV245TPHR4的Datasheet PDF文件第3页 
1SV245  
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type  
1SV245  
UHF SHF Tuning  
Unit: mm  
•
•
•
High capacitance ratio: C2 V/C25 V = 5.7 (typ.)  
Low series resistance: rs = 1.2 Ω (typ.)  
Excellent C-V characteristics, and small tracking error.  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Reverse voltage  
Symbol  
Rating  
30  
Unit  
V
V
V
R
Peak reverse voltage  
Junction temperature  
Storage temperature range  
V
35 (R = 10 kΩ)  
RM  
L
T
j
125  
°C  
°C  
T
stg  
−55~125  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
―
―
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate,  
etc).  
TOSHIBA  
1-1E1A  
Weight: 0.004 g (typ.)  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Reverse voltage  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
I
= 1 μA  
R
30  
⎯
⎯
⎯
⎯
10  
V
R
Reverse current  
Capacitance  
I
V
V
V
= 28 V  
nA  
pF  
pF  
⎯
Ω
R
R
R
R
C2 V  
C25 V  
= 2 V, f = 1 MHz  
= 25 V, f = 1 MHz  
⎯
3.31  
0.61  
5.0  
⎯
⎯
4.55  
0.77  
6.5  
Capacitance  
⎯
Capacitance ratio  
Series resistance  
C2 V/C25 V  
5.7  
1.2  
r
s
V
= 1 V, f = 470 MHz  
2.0  
R
Note 1: Unites are compounded in one package and are matched to 6.0%.  
C (max) − C (min)  
<
0.06 (VR = 2~25 V)  
=
C (min)  
Marking  
1
2007-11-01  
123

中文翻译

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