Datasheet > 1SV239TPH3

1SV239TPH3

更新时间： 2024-01-21 07:42:34

品牌	Logo	应用领域
东芝 - TOSHIBA		测试光电二极管
页数	文件大小	规格书
3页	151K
描述
DIODE VHF-UHF BAND, 4.25 pF, 15 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode

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技术参数
数据手册

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1SV239TPH3 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	R-PDSO-G2	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.80
风险等级：	5.73	最小击穿电压：	15 V
配置：	SINGLE	最小二极管电容比：	2
标称二极管电容：	4.25 pF	二极管元件材料：	SILICON
二极管类型：	VARIABLE CAPACITANCE DIODE	频带：	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 代码：	R-PDSO-G2	JESD-609代码：	e0
元件数量：	1	端子数量：	2
最高工作温度：	125 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
认证状态：	Not Qualified	最大重复峰值反向电压：	15 V
最大反向电流：	0.003 µA	反向测试电压：	15 V
子类别：	Varactors	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	GULL WING
端子位置：	DUAL	Base Number Matches：	1

1SV239TPH3 数据手册

1SV239

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type

1SV239

VCO for UHF Radio

Unit: mm

•

Ultra low series resistance: r = 0.44 Ω (typ.)

Useful for small size set

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Reverse voltage

Symbol

Rating

Unit

125

Junction temperature

°C

Storage temperature range

stg

−55~125

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

JEDEC

JEITA

―

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

TOSHIBA

1-1E1A

Weight: 0.004 g (typ.)

Electrical Characteristics (Ta = 25°C)

Characteristics

Reverse voltage

Symbol

Test Condition

Min

Typ.

Max

Unit

= 1 μA

⎯

Reverse current

Capacitance

= 15 V

⎯

= 2 V, f = 1 MHz

= 10 V, f = 1 MHz

⎯

3.8

1.5

2.0

⎯

4.25

1.75

2.4

4.7

2.0

⎯

2 V

Capacitance

10 V

Capacitance ratio

Series resistance

2 V 10 V

= 1 V, f = 470 MHz

0.44

0.6

Marking

2007-11-01

12 3

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