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1SV242TPHR4 PDF预览

1SV242TPHR4

更新时间： 2024-01-01 07:51:19
品牌 Logo 应用领域
东芝 - TOSHIBA 测试光电二极管
页数 文件大小 规格书
3页 160K
描述
DIODE VHF BAND, 39 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode

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1SV242TPHR4 技术参数

生命周期：Active包装说明：R-PDSO-G3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.67
其他特性：SMALL TRACKING ERROR, 2.5% MATCHED SETS ARE AVAILABLE最小击穿电压：30 V
配置：COMMON CATHODE, 2 ELEMENTS最小二极管电容比：13.4
标称二极管电容：39 pF二极管元件材料：SILICON
二极管类型：VARIABLE CAPACITANCE DIODE频带：VERY HIGH FREQUENCY
JESD-30 代码：R-PDSO-G3元件数量：2
端子数量：3最高工作温度：125 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE认证状态：Not Qualified
最大反向电流：0.01 µA反向测试电压：28 V
表面贴装：YES端子形式：GULL WING
端子位置：DUALBase Number Matches：1

1SV242TPHR4 数据手册

 浏览型号1SV242TPHR4的Datasheet PDF文件第2页浏览型号1SV242TPHR4的Datasheet PDF文件第3页 
1SV242  
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type  
1SV242  
TV VHF Wide Band Tuning  
Unit: mm  
High capacitance ratio: C1 V/C28 V = 14.5 (typ.)  
•
•
•
Low series resistance: r = 0.65 Ω (typ.)  
s
Excellent C-V characteristics, and small tracking error.  
Small package  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Reverse voltage  
Symbol  
Rating  
30  
Unit  
V
V
V
R
Peak reverse voltage  
Junction temperature  
Storage temperature range  
V
35 (R = 10 kΩ)  
RM  
L
T
j
125  
°C  
°C  
T
stg  
−55~125  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
reliability significantly even if the operating conditions (i.e.  
operating temperature/current/voltage, etc.) are within the  
absolute maximum ratings.  
JEDEC  
JEITA  
―
Please design the appropriate reliability upon reviewing the  
Toshiba Semiconductor Reliability Handbook (“Handling  
Precautions”/“Derating Concept and Methods”) and individual  
reliability data (i.e. reliability test report and estimated failure rate,  
etc).  
SC-59  
TOSHIBA  
1-3G1F  
Weight: 0.013 g (typ.)  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Reverse voltage  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
I
= 1 μA  
R
30  
⎯
36  
⎯
⎯
⎯
10  
42  
3.0  
⎯
V
R
Reverse current  
Capacitance  
I
V
V
V
= 28 V  
nA  
pF  
pF  
⎯
Ω
R
R
R
R
C1 V  
C28 V  
= 1 V, f = 1 MHz  
= 28 V, f = 1 MHz  
⎯
(Note 1)  
39  
Capacitance  
(Note 1) 2.43  
(Note 1) 13.4  
2.7  
14.5  
0.65  
Capacitance ratio  
Series resistance  
C1 V/C28 V  
r
s
V
= 5 V, f = 470 MHz  
(Note 1)  
⎯
0.8  
R
Note 1: Characteristic between anode 1 and anode 2  
Note 2: The manufactured devices are divided into groups so that the capacitance variation in each group is kept  
below 2.5% in the VR range from 1 V to 28 V.  
C (max) − C (min)  
<
0.025 (VR = 1~28 V)  
=
C (min)  
Note 3: Packing  
Devices in each group occupy adjacent cavities of the embossed tape. The number of devices in each  
group is a multiple of 12 (except for TPH6/TPH6R and TPH7/TPHR7).  
Marking  
1
2007-11-01  
123

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