是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | R-PDSO-G3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.80 |
风险等级: | 5.73 | 其他特性: | SMALL TRACKING ERROR, 2.5% MATCHED SETS ARE AVAILABLE |
最小击穿电压: | 30 V | 配置: | COMMON CATHODE, 2 ELEMENTS |
最小二极管电容比: | 13.4 | 标称二极管电容: | 39 pF |
二极管元件材料: | SILICON | 二极管类型: | VARIABLE CAPACITANCE DIODE |
频带: | VERY HIGH FREQUENCY | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e0 | 元件数量: | 2 |
端子数量: | 3 | 最高工作温度: | 125 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 35 V | 最大反向电流: | 1e-8 µA |
反向测试电压: | 28 V | 子类别: | Varactors |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子位置: | DUAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1SV242TPH3 | TOSHIBA |
获取价格 |
DIODE VHF BAND, 39 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Dio | |
1SV242TPH4 | TOSHIBA |
获取价格 |
DIODE VHF BAND, 39 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Dio | |
1SV242TPH6 | TOSHIBA |
获取价格 |
DIODE VHF BAND, 39 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Dio | |
1SV242TPH7 | TOSHIBA |
获取价格 |
DIODE VHF BAND, 39 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Dio | |
1SV242TPHR3 | TOSHIBA |
获取价格 |
DIODE VHF BAND, 39 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Dio | |
1SV242TPHR4 | TOSHIBA |
获取价格 |
DIODE VHF BAND, 39 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Dio | |
1SV242TPHR7 | TOSHIBA |
获取价格 |
DIODE VHF BAND, 39 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Dio | |
1SV245 | TOSHIBA |
获取价格 |
VARIABLE CAPACITANCE DIODE (UHF SHF TUNING) | |
1SV245 | TYSEMI |
获取价格 |
High Capacitance Ratio:C2V/C25V = 5.7(Typ.) Low Series Resistance:rs = 1.2 (Typ.) | |
1SV245 | KEXIN |
获取价格 |
Silicon Epitaxial Planar Diode |