Datasheet > 1SS387TPH3F

1SS387TPH3F

更新时间： 2024-11-18 12:54:31

品牌	Logo	应用领域
东芝 - TOSHIBA		二极管
页数	文件大小	规格书
4页	216K
描述
TOSHIBA Diode Silicon Epitaxial Planar Type

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1SS387TPH3F 数据手册

1SS387

TOSHIBA Diode Silicon Epitaxial Planar Type

1SS387

Ultra High Speed Switching Applications

Unit: mm

z Compact 2-pin package – ideal for high-density mounting

z Low forward voltage : V = 0.98V (typ.)

z Fast reverse recovery time: t = 1.6ns (typ.)

F (3)

z Small total capacitance

: C = 0.5pF (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

Reverse voltage

Maximum (peak) forward current

Average forward current

Surge current (10ms)

Power dissipation

200

100

FSM

150 *

125

°C

Junction temperature

JEDEC

―

Storage temperature

−55∼125

stg

JEITA

1-1G1A

TOSHIBA

Weight: 1.4mg (typ)

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Mounted on a glass epoxy circuit board of 20 × 20mm,

pad dimension of 4 × 4mm.

Electrical Characteristics (Ta = 25°C)

Test

Circuit

Characteristic

Symbol

Test Condition

= 1mA

Min

Typ.

Max

Unit

―

0.62

0.75

0.98

―

F (1)

F (2)

F (3)

R (1)

R (2)

Forward voltage

= 10mA

= 100mA

1.20

0.1

0.5

3.0

4.0

= 30V

Reverse current

μA

= 80V

―

Total capacitance

= 0, f = 1MH

0.5

1.6

Reverse recovery time

I = 10mA, Fig.1

2007-11-01

12 3 4

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