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1SS388 PDF预览

1SS388

更新时间: 2024-11-18 06:20:07
品牌 Logo 应用领域
商升特 - SEMTECH 肖特基二极管
页数 文件大小 规格书
3页 217K
描述
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE

1SS388 数据手册

 浏览型号1SS388的Datasheet PDF文件第2页浏览型号1SS388的Datasheet PDF文件第3页 
1SS388  
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE  
for high speed switching application  
PINNING  
DESCRIPTION  
Cathode  
PIN  
1
Anode  
2
2
1
O
Top View  
Marking Code: "O"  
Simplified outline SOD-523 and symbol  
O
Absolute Maximum Ratings (Ta = 25 C)  
Parameter  
Symbol  
Value  
Unit  
Maximum (Peak) Reverse Voltage  
Reverse Voltage  
VRM  
VR  
45  
V
V
40  
Average Forward Current  
Maximum (Peak) Forward Current  
Surge Current (10 ms)  
IO  
100  
mA  
mA  
A
IFM  
IFSM  
Ptot  
TJ  
300  
1
Power Dissipation  
150  
mW  
O
C
Junction Temperature  
125  
O
Operating Temperature Range  
Storage Temperature Range  
Topr  
Ts  
- 40 to + 100  
- 55 to + 125  
C
O
C
O
Characteristics at Ta = 25 C  
Parameter  
Symbol  
VF  
Max.  
0.6  
Unit  
V
Forward Voltage  
at IF = 50 mA  
Reverse Current  
at VR = 10 V  
IR  
5
µA  
pF  
Total Capacitance  
at f = 1 MHz  
CT  
25  
SEMTECH ELECTRONICS LTD.  
(Subsidiary of Sino-Tech International Holdings Limited, a company  
listed on the Hong Kong Stock Exchange, Stock Code: 724)  
®
Dated : 23/11/2006  

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