Datasheet > 1SS388(TL3FT)

1SS388(TL3FT)

更新时间： 2024-02-18 12:36:08

品牌	Logo	应用领域
东芝 - TOSHIBA		二极管
页数	文件大小	规格书
3页	222K
描述
Rectifier Diode

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技术参数
数据手册

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1SS388(TL3FT) 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.64	二极管类型：	RECTIFIER DIODE
Base Number Matches：	1

1SS388(TL3FT) 数据手册

1SS388

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

1SS388

High Speed Switching Application

Unit: mm

z Small package

z Low forward voltage: V

= 0.54V (typ.)

F (3)

z Low reverse current: I = 5μA (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse Voltage

Reverse voltage

Maximum (peak) forward current

Average forward current

Surge current (10ms)

300

100

FSM

Power dissipation

P *

150

°C

Junction temperature

125

Storage temperature range

Operating temperature range

−55 to 125

−40 to 100

stg

opr

JEDEC

―

JEITA

TOSHIBA

1-1G1A

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

Weight: 1.4mg (typ.)

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Mounted on a glass epoxy circuit board of 20 × 20 mm, pad dimension of 4 × 4 mm.

Electrical Characteristics (Ta = 25°C)

Test

Circuit

Characteristic

Symbol

Test Condition

= 1mA

Min

Typ.

Max

Unit

―

0.28

0.36

0.54

―

F (1)

F (2)

F (3)

Forward voltage

= 10mA

= 50mA

0.60

Reverse current

= 10V

μA

Total capacitance

= 0, f = 1MH

Equivalent Circuit (Top View)

Marking

Start of commercial production

1994-11

2014-03-01

12 3

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