Datasheet > 1SS388

1SS388

更新时间： 2024-11-18 07:07:59

品牌	Logo	应用领域
金誉半导体 - HTSEMI		二极管开关
页数	文件大小	规格书
2页	228K
描述
High Speed SWITCHING Diodes

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中文翻译

获取价格

数据手册

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1SS388 数据手册

1SS388

High Speed SWITCHING Diodes

SOD-523

FEATURES

Small pacakage

Low forward voltage : V

^F3= 0.54 ( typ )

= 5uA ( typ )

Low reverse current : I_R

MARKING: S3

Maximum Ratings and Electrical Characteristics, Single Diode @T_A=25 ℃

Parameter

Symbol

V_RM

V_R

Limits

Unit

Peak reverse voltage

DC reverse voltage

Maximum (peak) forward current

Average forward current

Surge current (10ms)

Power dissipation

I_FM

300

℃

I_O

100

I_FSM

P_D

1000

150

Junction temperature

Storage temperature

T_j

125

T_stg

T_opr

-55-125

-40-100

℃

Operating temperature range

℃

Electrical Ratings @T_A=25℃

Parameter

Symbol

V_F1

Min.

Typ.

0.28

0.36

0.54

Max. Unit

Conditions

I_F=1mA

Forward voltage

I_F=10mA

I_F=50mA

V_R=10V

V_F2

V_F3

0.60

Reverse current

Total capacitance

I_R

μA

C_T

V_R=0,f=1MHZ

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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