Datasheet > 1SS250(T5L

1SS250(T5L

更新时间： 2024-11-14 15:29:59

品牌	Logo	应用领域
东芝 - TOSHIBA		二极管
页数	文件大小	规格书
4页	323K
描述
Rectifier Diode

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技术参数
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1SS250(T5L 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.69	二极管类型：	RECTIFIER DIODE
Base Number Matches：	1

1SS250(T5L 数据手册

1SS250

TOSHIBA Diode Silicon Epitaxial Planar Type

1SS250

Unit: mm

Ultra High Speed Switching Application

 Low forward voltage

: V

= 0.90V (typ.)

F (2)

 Fast reverse recovery time: t = 60ns (max)

 Small total capacitance

 Small package

: C = 1.5pF (typ.)

: SC−59

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Peak reverse voltage

Symbol

Rating

Unit

250

200

Reverse voltage

Peak forward current

Average forward current

Surge current (10 ms)

Power dissipation

300

100

FSM

JEDEC

JEITA

TO−236MOD

150

°C

SC−59

Junction temperature

Storage temperature range

125

TOSHIBA

2−3F1S

−55 to 125

stg

Weight: 12 mg (typ.)

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

1984-05

2017-10-31

12 3 4

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