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1SS265 PDF预览

1SS265

更新时间: 2024-11-15 03:54:59
品牌 Logo 应用领域
乐山 - LRC 二极管开关
页数 文件大小 规格书
3页 46K
描述
High-speed switching diode

1SS265 技术参数

生命周期:Contact Manufacturer包装说明:O-LALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.73Is Samacsys:N
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJEDEC-95代码:DO-34
JESD-30 代码:O-LALF-W2元件数量:1
端子数量:2最高工作温度:125 °C
最大输出电流:0.1 A封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
最大功率耗散:0.3 W最大重复峰值反向电压:35 V
子类别:Rectifier Diodes表面贴装:NO
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

1SS265 数据手册

 浏览型号1SS265的Datasheet PDF文件第2页浏览型号1SS265的Datasheet PDF文件第3页 
LESHAN RADIO COMPANY, LTD.  
High-speed switching diode  
1SS265  
. 300mW DO-34  
. Glass silicon switching diodes  
. We declare that the material of product  
compliance with RoHS requirements.  
Product Characteristic  
Absolute Maximum Ratings(Ta=25°C)  
TYPE  
VRM(V)  
35  
VR(V)  
20  
IO(mA)  
100  
P(mW)  
300  
1SS265  
Characteristics at Ta = 25°C  
Symbol  
VF  
Min.  
——  
Typ.  
——  
Max.  
1
Unit  
V
Forward Voltage  
at IF = 10 mA  
Leakage Current at VR = 20 V  
0.1  
1.5  
IR  
Ct  
——  
——  
——  
——  
μA  
pF  
Capacitance at VR = 10V f =1MHZ  
Characteristic Curves  
IF-VF  
IR-VR  
Ta=25℃  
10  
1
0.5  
0.3  
1.0  
-1  
10  
0.1  
0.05  
-2  
10  
0
0.5  
0.4  
0.6  
0.8  
1
1.2  
1
3
10  
30  
FORWARD VOLTAGE VF(V)  
REVERSE VOLTAGE VR(V)  
1/2  

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