1SS250TE85L

更新时间： 2024-01-10 11:23:12

品牌	Logo	应用领域
东芝 - TOSHIBA		整流二极管光电二极管
页数	文件大小	规格书
3页	185K
描述
TOSHIBA Diode Silicon Epitaxial Planar Type

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中文翻译

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技术参数
数据手册

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1SS250TE85L 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.70
风险等级：	5.69	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	1.2 V	JESD-30 代码：	R-PDSO-G3
最大非重复峰值正向电流：	2 A	元件数量：	1
端子数量：	3	最高工作温度：	125 °C
最大输出电流：	0.1 A	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
最大功率耗散：	0.15 W	认证状态：	Not Qualified
最大反向电流：	1 µA	最大反向恢复时间：	0.06 µs
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	Base Number Matches：	1

1SS250TE85L 数据手册

1SS250

TOSHIBA Diode Silicon Epitaxial Planar Type

1SS250

Unit: mm

Ultra High Speed Switching Application

z Low forward voltage

: V

= 0.90V (typ.)

F (2)

z Fast reverse recovery time: t = 60ns (max)

z Small total capacitance

z Small package

: C = 1.5pF (typ.)

: SC−59

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Peak reverse voltage

Symbol

Rating

Unit

250

200

Reverse voltage

Peak forward current

Average forward current

Surge current (10 ms)

Power dissipation

300

100

FSM

150

°C

Junction temperature

Storage temperature range

125

JEDEC

−

−55~125

stg

JEITA

SC−59

TOSHIBA

1−3G1B

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

Weight: 0.012g (typ.)

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Electrical Characteristics (Ta = 25°C)

Test

Circuit

Characteristic

Forward voltage

Symbol

Test Condition

= 10mA

Min

Typ.

Max

Unit

―

0.72

0.90

―

1.00

1.20

0.1

1.0

3.0

F (1)

F (2)

R (1)

R (2)

―

= 100mA

= 50V

Reverse current

μA

= 200V

―

= 0, f = 1MHz

1.5

Total capacitance

= 10mA (Fig.1)

Reverse recovery time

Fig.1 Reverse recovery time (t ) test circuit

Marking

2007-11-01

12 3

中文翻译

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