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1PS66SB17 PDF预览

1PS66SB17

更新时间: 2024-11-09 21:54:19
品牌 Logo 应用领域
恩智浦 - NXP 微波混频二极管光电二极管
页数 文件大小 规格书
8页 49K
描述
4 V, 30 mA low Cd Schottky barrier diode

1PS66SB17 技术参数

是否Rohs认证:符合生命周期:Transferred
包装说明:PLASTIC PACKAGE-6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.60风险等级:5.25
Is Samacsys:N配置:SEPARATE, 3 ELEMENTS
最大二极管电容:1 pF二极管元件材料:SILICON
二极管类型:MIXER DIODE最大正向电压 (VF):0.35 V
JESD-30 代码:R-PDSO-F6JESD-609代码:e3
湿度敏感等级:1元件数量:3
端子数量:6最高工作温度:150 °C
最低工作温度:-65 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大反向电流:0.25 µA反向测试电压:3 V
子类别:Other Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Tin (Sn)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

1PS66SB17 数据手册

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1PSxSB17  
4 V, 30 mA low Cd Schottky barrier diode  
Rev. 06 — 4 April 2005  
Product data sheet  
1. Product profile  
1.1 General description  
Planar low capacitance Schottky barrier diode encapsulated in a very small SMD plastic  
package.  
Table 1:  
Product overview  
Type number  
Package  
Philips  
Configuration  
JEITA  
-
1PS66SB17  
1PS76SB17  
1PS79SB17  
SOT666  
SOD323  
SOD523  
triple isolated diode  
single diode  
SC-76  
SC-79  
single diode  
1.2 Features  
Very low diode capacitance  
Very low forward voltage  
Very small SMD plastic packages  
1.3 Applications  
Digital applications:  
Ultra high-speed switching  
Clamping circuits.  
RF applications:  
Diode ring mixer  
RF detector  
RF voltage doubler  
1.4 Quick reference data  
Table 2:  
Symbol  
IF  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
30  
4
Unit  
mA  
V
continuous forward current  
continuous reverse voltage  
diode capacitance  
-
-
-
-
VR  
-
Cd  
0.8  
1
pF  

1PS66SB17 替代型号

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