Datasheet > 1PS70SB16

1PS70SB16

更新时间： 2024-11-10 12:53:35

品牌	Logo	应用领域
TYSEMI		二极管光电二极管
页数	文件大小	规格书
1页	100K
描述
Low forward voltage Guard ring protected Very small plastic SMD package

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数据手册

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1PS70SB16 数据手册

Product specification

1PS70SB10; 1PS70SB14

1PS70SB15; 1PS70SB16

Features

Low forward voltage

Guard ring protected

Very small plastic SMD package

Absolute Maximum Ratings Ta = 25

Parameter

Continuous reverse voltage

Symbol

V^R

Conditions

Min

Max

Unit

Continuous forward current

I^F

200

300

600

200

+150

125

+125

625

Repetitive peak forward current

Non-repetitive peak forward current

Total power dissipation (per package)

Storage temperature

I^FRM

I^FSM

P^{t ot}

T^stg

t^p

1s, ä

0.5

t^p< 10 ms

T^{a mb}< 25

-65

Junction temperature

Operating ambient temperature

thermal resistance from junction to ambient

T^{a mb}

R^{th j-a}

K/W

Electrical Characteristics Ta = 25

Parameter

Symbol

Conditions

I^F= 0.1 mA

Min

Max

240

320

400

500

800

Unit

I^F= 1 mA

Continuous forward voltage

V^F

I^F= 10 mA

I^F= 30 mA

I^F= 100 mA

Reverse current

Diode capacitance

Note

I^R

V^R= 25 V, Note 1

VR = 0 V; f = 1 MHz

1. Pulse test: t^p< 300 s;

0.02.

Marking

Type

1PS70SB10 1PS70SB14 1PS70SB15 1PS70SB16

7*0 7*4 7*5 7*6

Marking

http://www.twtysemi.com

4008-318-123

sales@twtysemi.com

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1PS70SB20	NXP	获取价格	Schottky barrier diode
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1PS70SB40	NXP	获取价格	Schottky barrier double diodes
1PS70SB40	TYSEMI	获取价格	Low forward voltage Guard ring protected Very small plastic SMD package
1PS70SB40	KEXIN	获取价格	Schottky barrier (double) diodes