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1PGSMA4760 PDF预览

1PGSMA4760

更新时间: 2024-09-17 00:39:39
品牌 Logo 应用领域
TSC /
页数 文件大小 规格书
6页 350K
描述
1W, 10V - 200V Surface Mount Silicon Zener Diode

1PGSMA4760 数据手册

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1PGSMA4740 - 1PGSMA200Z  
Taiwan Semiconductor  
1W, 10V - 200V Surface Mount Silicon Zener Diode  
FEATURES  
KEY PARAMETERS  
Photo Glass passivated junction  
Ideal for automated placement  
Low inductance  
PARAMETER  
VALUE UNIT  
VZ  
10 - 200  
1.2 - 25  
1
V
mA  
W
Test current IZT  
Ptot  
Typical IR less than 1μA above 11V  
Compliant to RoHS Directive 2011/65/EU and in accordance to  
WEEE 2002/96/EC  
TJ MAX  
175  
°C  
Halogen-free according to IEC 61249-2-21  
Package  
Configuration  
DO-214AC (SMA)  
Single die  
APPLICATIONS  
For general purpose regulation and protection applications  
MECHANICAL DATA  
Case: DO-214AC (SMA)  
Molding compound meets UL 94V-0 flammability rating  
Part no. with suffix Hmeans AEC-Q101 qualified  
Packing code with suffix "G" means green compound  
(halogen-free)  
Moisture sensitivity level: level 1, per J-STD-020  
Terminal: Matte tin plated leads, solderable per J-STD-002  
Meet JESD 201 class 2 whisker test  
Polarity: As marked  
DO-214AC (SMA)  
Weight: 0.06g (approximately)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)  
PARAMETER  
SYMBOL  
VALUE  
1.2  
UNIT  
V
Forward voltage @ IF=200mA  
Total power dissipation at TA=50°C, derate above 50°C(1)  
Total power dissipation at TA=75°C  
Junction temperature  
VF  
Ptot  
Ptot  
TJ  
1.25  
W
1
W
-55 to +175  
-55 to +175  
°C  
Storage temperature  
TSTG  
°C  
Note:  
1. Mounted on 5mm x 5mm Cu pad test board  
THERMAL PERFORMANCE  
PARAMETER  
Junction-to-lead thermal resistance per diode  
Junction-to-ambient thermal resistance per diode  
Junction-to-case thermal resistance per diode  
SYMBOL  
RӨJL  
LIMIT  
29  
UNIT  
°C/W  
°C/W  
°C/W  
RӨJA  
120  
31  
RӨJC  
Thermal Performance Note: Units mounted on recommended PCB (5mm x 5mm Cu pad test board)  
1
Version:A1707  

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