Datasheet > 1N914

1N914

更新时间： 2024-11-19 22:34:59

品牌	Logo	应用领域
美丽微 - FORMOSA		二极管开关
页数	文件大小	规格书
2页	75K
描述
Switching Diode - Silicon epitaxial planar type

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中文翻译

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数据手册

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1N914 数据手册

Switching Diode

Formosa MS

1N914

Silicon epitaxial planar type

Features

DO-35

Low power loss, high efficiency

High reliability

1.141(29.0)

1.102(28.0)

High speed ( t_rr< 4 ns )

.083(2.10)

.051(1.30)

DIA.

.169(4.30)

.146(3.70)

Mechanical data

1.141(29.0)

1.102(28.0)

Case : Glass, DO-35

.022(.55)

.018(.45)

DIA.

Terminals : Solder plated,solderable per MIL-STD-750,

Method 2026

Dimensionsininchesand(millimeters)

Polarity: Indicated bycathode band

Mounting Position : Any

Weight :0.13 gram

MAXIMUM RATINGS (AT T_A=25 C unless otherwise noted)

PARAMETER

Non-Repetitive peak reverse voltage

Reverse voltage

CONDITIONS

Symbol

V_RM

MIN.

TYP.

MAX.

100

UNIT

V_R

Peak forward surge current

Repetitive peak forward voltage

Forward current

1.0

250

150

t_p= 1 us

I_FSM

I_FRM

I_F

Average forward current

Power dissipation

V_R= 0

I_FAV

P_V

250

175

+175

Junction temperature

T_j

Storage temperature

-55

T_STG

ELECTRICAL CHARACTERISTICS (AT T_A=25 C unless otherwise noted)

PARAMETER

CONDITIONS

Symbol

V_F

MIN.

0.62

TYP.

MAX.

0.72

1.00

UNIT

I_F= 5mA

I_F= 10mA

V_R= 20V

Forward voltage

V_F

0.86

I_R

V_R= 20V , T_j= 150 C

Reverse current

I_R

V_R= 75V

I_R

5.0

Breakdown current

I_R= 100uA , T_P/T = 0.01 T_P= 0.3ms

V_R= 0 , f = 1MHz , V_HF= 50mV

V_HF= 2V , f = 100MHz

V_(BR)

C_D

100

Diode capacitance

4.0

Rectification efficiency

n_R

I_F= I_R= 10mA , I_RR= 1mA

I_F=10mA, V_R=6V, I_RR= 0.1 X I_R, R_L=100_OHM

t_rr

Reverse recovery time

中文翻译

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与1N914相关器件

型号	品牌	获取价格	描述	数据表
1N914(A)(B)	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 0.15A, Silicon, DO-35,
1N914.T50A	FAIRCHILD	获取价格	Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon, DO-35
1N914.T50R	FAIRCHILD	获取价格	Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon, DO-35
1N914.TR	FAIRCHILD	获取价格	0.2 A, 100 V, SILICON, SIGNAL DIODE, DO-35
1N914.TR	TI	获取价格	0.2A, 100V, SILICON, SIGNAL DIODE, DO-35
1N914/A52R	ETC	获取价格	DIODE KLEINSIGNAL
1N914/F2	VISHAY	获取价格	Rectifier Diode, 1 Element, 0.075A, 100V V(RRM), Silicon, DO-204AH, GLASS, DO-35, 2 PIN
1N914/F3	VISHAY	获取价格	Rectifier Diode, 1 Element, 0.075A, 100V V(RRM), Silicon, DO-204AH, GLASS, DO-35, 2 PIN
1N914_1	MICROSEMI	获取价格	SWITCHING DIODE
1N914_11	MCC	获取价格	500mW 100 Volt Silicon Epitaxial Diodes