Datasheet > 1N914

1N914

更新时间： 2024-11-20 12:51:19

品牌	Logo	应用领域
鲁光 - LGE		小信号开关二极管
页数	文件大小	规格书
3页	210K
描述
Small Signal Switching Diodes

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中文翻译

获取价格

技术参数
数据手册

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1N914 技术参数

Case Style：	DO-35	IF（mA）：	150
Maximum recurrent peak reverse voltage：	100	TRR（nS)：	4
Maximum instantaneous forward voltage：	1	@IF（uA）：	0.01
Maximum reverse current：	0.025	@VR：
class：	Diodes

1N914 数据手册

1N914/1N914A/1N914B

Small Signal Switching Diodes

REVERSE VOLTAGE: 75 V

CURRENT： 75 mA

DO - 35

Features

◇

Glass sealed envelope. (MSD)

_RM=100V guaranteed

High reliability

Mechanical Data

◇

Case: DO-35, glass case

Polarity: Color band denotes cathode

Weight: 0.004 ounces, 0.13 grams

Dimensions in millimeters

Rating at 25^oC ambient temperature unless otherwise specified.

Maximum Ratings

UNITS

1N914,1N914A,1N914B

V_R

V_RM

100

Maximum DC reverse voltage

Maximum recurrent peak reverse voltage

Average forward rectified current

I_O

half wave rectification with resistive load

Forward surge current t<1ms

t=1ms

4.0

I_FSM

1.0

0.5

t=1s

P_tot

T_STG

250

175

- 65 --- + 175

Power dissipation (note)

Junction temperature

Storage temperature range

℃

Note:Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.

Electrical Characteristics_{Rating at 25 C ambient temperature unless otherwise specified.}

Min

Typ

Max

UNITS

Forw ard voltage @1N914,1N914A,I_F=10mA

1N914B,I_F=5mA

1.0

0.72

1.0

V_F

0.62

1N914B,I_F=100mA

Leakage current @V_R=20V

@V_R=75V

n A

µA

I_R

@V_R=20V,T_j=150℃

Capacitance

Reverse recovery time @I_F=10mA,I_R=10mA,

@ V_R=0V,f=1MH_Z

C_tot

R_L=100Ω,measured at I_R=1mA

Voltage rise w hen sw itching on

tested w ith 50mA pulses t_r=20ns

V_fr

2.5

R_θjA

500

Thermal resistance junction to ambient (note )

Note:Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.

℃/W

http://www.luguang.cn

mail:lge@luguang.cn

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中文翻译

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与1N914相关器件

型号	品牌	获取价格	描述	数据表
1N914(A)(B)	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 0.15A, Silicon, DO-35,
1N914.T50A	FAIRCHILD	获取价格	Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon, DO-35
1N914.T50R	FAIRCHILD	获取价格	Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon, DO-35
1N914.TR	FAIRCHILD	获取价格	0.2 A, 100 V, SILICON, SIGNAL DIODE, DO-35
1N914.TR	TI	获取价格	0.2A, 100V, SILICON, SIGNAL DIODE, DO-35
1N914/A52R	ETC	获取价格	DIODE KLEINSIGNAL
1N914/F2	VISHAY	获取价格	Rectifier Diode, 1 Element, 0.075A, 100V V(RRM), Silicon, DO-204AH, GLASS, DO-35, 2 PIN
1N914/F3	VISHAY	获取价格	Rectifier Diode, 1 Element, 0.075A, 100V V(RRM), Silicon, DO-204AH, GLASS, DO-35, 2 PIN
1N914_1	MICROSEMI	获取价格	SWITCHING DIODE
1N914_11	MCC	获取价格	500mW 100 Volt Silicon Epitaxial Diodes