Datasheet > 1N914

1N914

更新时间： 2024-11-20 11:45:27

品牌	Logo	应用领域
FRONTIER		二极管局域网
页数	文件大小	规格书
2页	122K
描述
SILICON EPITAXIAL PLANAR DIODE

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数据手册

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1N914 数据手册

Frontier Electronics Corp.

667 E. COCHRAN STREET, SIMI VALLEY, CA 93065

TEL: (805) 522-9998 FAX: (805) 522-9989

E-mail: frontiersales@frontierusa.com

Web: http://www.frontierusa.com

SILICON EPITAXIAL PLANAR DIODE

1N914 1N914A 1N914B

FEATURES

z FAST SWITCHING

z SMALL BODY

0.52∅

1.9 ∅

3.9∅

MECHANICAL DATA

z CASE GLASS, DO35, DIMENSIONS IN INCHES AND (MILLIMETERS)

z LEADS SOLDERABLE PER MIL-STD-202, METHOD 208

z POLARITY CATHODE INDICATED BY COLOR BAND

z WEIGHT 0.13 GRAMS

27.5

MIN

RATINGS

SYMBOL

1N914

1N914A

1N914B

UNITS

REVERSE VOLTAGE

V_R

PEAK REVERSE VOLTAGE

V_RM

100

RECTIFIED CURRENT (AVERAGE)

HALF WAVE RECTIFICATION WITH RESIST LOAD

AT T_amb=25 ºC AND ≥ 50Hz.

I_O

SURGE FORWARD CURRENT AT T < 1 s AND T_J=25 ºC

POWER DISSIPATION AT T_amb=25 ºC

JUNCTION TEMPERATURE

I_FSM

P_TOT

T_J

500

ºC

200

STORAGE TEMPERATURE RANGE

T_S

- 55 TO + 200

ºC

ELECTRICAL CHARACTERISTICS (A_TT_A=25°C UNLESS OTHERWISE NOTED)

CHARACTERISTICS

FORWARD VOLTAGE AT I_F=10mA ( 1N914 )

FORWARD VOLTAGE AT I_F=20mA ( 1N914A )

FORWARD VOLTAGE AT I_F=100mA ( 1N914B )

LEAKAGE CURRENT

SYMBOL

MIN

TYP

MAX

UNITS

V_F

AT V_R=20V

AT V_R=75V

AT V_R=20V T_J=150 ºC

I_R

μA

REVERSE BREAKDOWN VOLTAGE

TESTED WITH 100μA PULSES

CAPACITANCE AT V_F=V_R=0

V_R

100

C_TOT

VOLTAGE RISE WHEN SWITCHING ON

TESTED WITH 50mA FORWARD PULSES

V_FR

2.5

TP=0.1μS RISE TIME＜30ns F_P=50 TO 100 KHZ

REVERSE RECOVERY TIME

FROM I_F=10mA TO I_R=1mA V_R=6V R_L=100Ω

THERMAL RESISTANCE

FUNCTION TO AMBLENT AIR

RECTIFICATION EFFICIENCY

AT F=100 MHZ V_RF=2V

T_RR

R_THA

N_V

0.35

K / mW

0.45

1N914 1N914A 1N914B

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与1N914相关器件

型号	品牌	获取价格	描述	数据表
1N914(A)(B)	MICROSEMI	获取价格	Rectifier Diode, 1 Element, 0.15A, Silicon, DO-35,
1N914.T50A	FAIRCHILD	获取价格	Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon, DO-35
1N914.T50R	FAIRCHILD	获取价格	Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon, DO-35
1N914.TR	FAIRCHILD	获取价格	0.2 A, 100 V, SILICON, SIGNAL DIODE, DO-35
1N914.TR	TI	获取价格	0.2A, 100V, SILICON, SIGNAL DIODE, DO-35
1N914/A52R	ETC	获取价格	DIODE KLEINSIGNAL
1N914/F2	VISHAY	获取价格	Rectifier Diode, 1 Element, 0.075A, 100V V(RRM), Silicon, DO-204AH, GLASS, DO-35, 2 PIN
1N914/F3	VISHAY	获取价格	Rectifier Diode, 1 Element, 0.075A, 100V V(RRM), Silicon, DO-204AH, GLASS, DO-35, 2 PIN
1N914_1	MICROSEMI	获取价格	SWITCHING DIODE
1N914_11	MCC	获取价格	500mW 100 Volt Silicon Epitaxial Diodes