Datasheet > 1N914

1N914

更新时间： 2024-11-20 05:56:55

品牌	Logo	应用领域
SYNSEMI		二极管开关
页数	文件大小	规格书
2页	34K
描述
HIGH SPEED SWITCHING DIODES

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中文翻译

获取价格

数据手册

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1N914 数据手册

HIGH SPEED SWITCHING DIODES

1N914/A/B

DO - 35 Glass

(DO-204AH)

FEATURES :

• High switching speed: max. 4 ns

• Continuous reverse voltage:max. 75 V

• Repetitive peak reverse voltage:max. 100 V

• Repetitive peak forward current: max. 225 mA

• Pb / RoHS Free

1.00 (25.4)

0.079(2.0 )max.

min.

0.150 (3.8)

Cathode

max.

Mark

1.00 (25.4)

0.020 (0.52)max.

min.

MECHANICAL DATA :

Case: DO-35 Glass Case

Weight: approx. 0.13g

Dimensions in inches and ( millimeters )

Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)

Parameter

Symbol

V_RRM

V_RM

I_F

Value

100

Unit

Maximum Repetitive Peak Reverse Voltage

Maximum Continuous Reverse Voltage

Maximum Continuous Forward Current

Maximum Power Dissipation

P_D

250

I_FRM

I_FSM

T_J

Maximum Repetitive Peak Forward Current

Maximum Non-repetitive Peak Forward Current at t = 1s

Maximum Junction Temperature

225

0.5

175

°C

T_S

Storage Temperature Range

-65 to + 200

°C

Electrical Characteristics (T_J= 25°C unless otherwise noted)

Test Condition

Min

Typ

Max

Unit

Parameter

Symbol

V_R= 20 V

μA

I_R

Reverse Current

V_R= 20 V , Tj = 150 °C

I_F= 10 mA

1N914

1.0

0.72

1.0

4.0

I_F= 20 mA

1N914A

1N914B

V_F

Forward Voltage

I_F= 5 mA

0.62

I_F= 100 mA

f = 1MHz ; V_R= 0

I_F= 10 mA to I_R= 60 mA

R_L= 100 Ω ; measured

at I_R= 1mA

Diode Capacitance

Trr

Reverse Recovery Time

Page 1 of 2

Rev. 03 : March 25, 2005

中文翻译

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1N914.T50R	FAIRCHILD	获取价格	Rectifier Diode, 1 Element, 0.2A, 100V V(RRM), Silicon, DO-35
1N914.TR	FAIRCHILD	获取价格	0.2 A, 100 V, SILICON, SIGNAL DIODE, DO-35
1N914.TR	TI	获取价格	0.2A, 100V, SILICON, SIGNAL DIODE, DO-35
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1N914/F2	VISHAY	获取价格	Rectifier Diode, 1 Element, 0.075A, 100V V(RRM), Silicon, DO-204AH, GLASS, DO-35, 2 PIN
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