Datasheet > 1N8255ASMSTXV

1N8255ASMSTXV

更新时间： 2024-11-23 19:43:39

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
3页	155K
描述
Rectifier Diode,

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

1N8255ASMSTXV 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.66
Base Number Matches：	1

1N8255ASMSTXV 数据手册

1N8255 – 1N8257

Series

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

4 - 6 AMP

SUBMINIATURE

HYPERFAST RECOVERY

Designer’s Data Sheet

Part Number/Ordering Information ^1/

1N82

__ __

RECTIFIER

100 - 200 VOLTS

30 nsec

│

└

│

└

Screening

__ = Not Screened

TX = TX Level

TXV = TXV

S = S Level

FEATURES:

Package Type



Hyper Fast Reverse Recovery: 30 nsec Max

PIV to 200 Volts

Hermetically Sealed

Low Reverse Leakage

Void Free Ceramic Frit Glass Construction

For High Efficiency Applications

Available in Axial, Square Tab, Square Tab

(Short Tab), and Flat Leads Versions

TX, TXV, and S-Level Screening Available^2/

Alternative to 1N5807, US thru 1N5811, US

JAN, JANTX, JANTXV, and JANS Qualifications

Available per MIL-PRF-19500/774

__ = Axial Leaded

SMS = Surface Mount Square Tab

ASMS = Surface Mount Square Tab

(Short Tab Version)

FL = Flat Leads

Voltage/Family

55 = 100 V

56 = 150 V



57 = 200 V

MAXIMUM RATINGS ^3/

SYMBOL

VALUE UNIT

1N8255

1N8256

1N8257

V_RRM

V_RWM

V_R

100

150

200

Peak Repetitive Reverse Voltage

and DC Blocking Voltage

Axial Lead & FL, T_L< +55°C

SMS, T_EC< +125°C

Average Rectified Forward Current

(Resistive Load, 60Hz, Sine Wave)

I_O

ASMS, T_EC< +135°C

Peak Surge Current

(8.3 ms pulse, half sine wave superimposed on Io, allow

junction to reach equilibrium between pulses, T_A= 25°C)

1N8255 - 1N8256

1N8257

180

160

I_FSM

T_J& T_STG-65 to +175

°C

Operating & Storage Temperature

R_θJL

R_θJE

8.5

6.5

Junction to Lead for Axial & Flat Leads, L =.375"

Junction to End Tab for SMS

°C/W

Thermal Resistance

Junction to End Tab for ASMS

NOTES:

1/ For ordering information, price,

operating curves, and availability -

contact factory.

Axial Leaded (__)

Surface Mount Square Tab

(SMS / ASMS)

Flat Leads (FL)

2/ Screening based on MIL-PRF-

19500. Screening flows available on

request.

3/ Unless otherwise specified, all

electrical characteristics @25ºC.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RC0169E

DOC

12 3

中文翻译

下载PDF

与1N8255ASMSTXV相关器件

型号	品牌	获取价格	描述	数据表
1N8255FL	SSDI	获取价格	4 A, 100 V Subminiature Hyperfast Recovery Rectifier
1N8255SMS	SSDI	获取价格	6 A, 100 V Subminiature Hyperfast Recovery Rectifier
1N8255SMSS	SSDI	获取价格	4 - 6 AMP SUBMINIATURE HYPERFAST RECOVERY RECTIFIER 100 - 200 VOLTS 30 nsec
1N8255SMSTX	SSDI	获取价格	4 - 6 AMP SUBMINIATURE HYPERFAST RECOVERY RECTIFIER 100 - 200 VOLTS 30 nsec
1N8255SMSTXV	SSDI	获取价格	4 - 6 AMP SUBMINIATURE HYPERFAST RECOVERY RECTIFIER 100 - 200 VOLTS 30 nsec
1N8256	SSDI	获取价格	4 - 6 AMP SUBMINIATURE HYPERFAST RECOVERY RECTIFIER 100 - 200 VOLTS 30 nsec
1N8256ASMS	SSDI	获取价格	6 A, 150 V Subminiature Hyperfast Recovery Rectifier
1N8256FL	SSDI	获取价格	4 A, 150 V Subminiature Hyperfast Recovery Rectifier
1N8256SMS	SSDI	获取价格	6 A, 150 V Subminiature Hyperfast Recovery Rectifier
1N8256SMSS	SSDI	获取价格	4 - 6 AMP SUBMINIATURE HYPERFAST RECOVERY RECTIFIER 100 - 200 VOLTS 30 nsec

与1N8255ASMSTXV相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

36
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

28
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

56
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

53

产品中心

服务支持

精选活动

关于我们

帮助中心

1N8255ASMSTXV

1N8255ASMSTXV 技术参数

1N8255ASMSTXV 数据手册

与1N8255ASMSTXV相关器件

与1N8255ASMSTXV相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1N8255ASMSTXV

1N8255ASMSTXV 技术参数

1N8255ASMSTXV 数据手册

与1N8255ASMSTXV相关器件

与1N8255ASMSTXV相关文章

您还可以找

您在本页遇到什么问题？