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1N825A PDF预览

1N825A

更新时间: 2024-10-29 22:37:43
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 二极管温度补偿
页数 文件大小 规格书
4页 41K
描述
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW

1N825A 数据手册

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MOTOROLA  
SEMICONDUCTOR  
TECHNICAL DATA  
1N821,A 1N823,A  
1N825,A 1N827,A  
1N829,A  
Temperature-Compensated  
Zener Reference Diodes  
Temperature-compensated zener reference diodes utilizing a single chip oxide passi-  
vated junction for long-term voltage stability. A rugged, glass-enclosed, hermetically sealed  
structure.  
TEMPERATURE-  
COMPENSATED  
SILICON ZENER  
REFERENCE DIODES  
6.2 V, 400 mW  
Mechanical Characteristics:  
CASE: Hermetically sealed, all-glass  
DIMENSIONS: See outline drawing.  
FINISH: All external surfaces are corrosion resistant and leads are readily solderable.  
POLARITY: Cathode indicated by polarity band.  
WEIGHT: 0.2 Gram (approx.)  
MOUNTING POSITION: Any  
Maximum Ratings  
Junction Temperature: – 55 to +175°C  
Storage Temperature: – 65 to +175°C  
DC Power Dissipation: 400 mW @ T = 50°C  
A
WAFER FAB LOCATION: Phoenix, Arizona  
CASE 299  
DO-204AH  
GLASS  
ASSEMBLY/TEST LOCATION: Phoenix, Arizona  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted. V = 6.2 V ± 5%* @ I = 7.5 mA) (Note 5)  
A
Z
ZT  
Temperature  
Coefficient  
For Reference Only  
%/°C  
Maximum  
Voltage Change  
Ambient  
Test Temperature  
Maximum  
Dynamic Impedance  
JEDEC  
Type No.  
V (Volts)  
°C  
±1°C  
Z
Ohms  
Z
ZT  
(Note 1)  
(Note 1)  
(Note 2)  
1N821  
0.096  
– 55, 0, +25, +75, +100  
0.01  
0.005  
0.002  
0.001  
0.0005  
0.01  
15  
1N823  
0.048  
1N825  
0.019  
0.009  
0.005  
0.096  
0.048  
0.019  
0.009  
0.005  
1N827  
1N829  
1N821A  
1N823A  
1N825A  
1N827A  
1N829A  
10  
0.005  
0.002  
0.001  
0.0005  
*Tighter-tolerance units available on special request.  
Motorola TVS/Zener Device Data  
6.2 Volt OTC 400 mW DO-35 Data Sheet  
8-159  

1N825A 替代型号

型号 品牌 替代类型 描述 数据表
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