生命周期: | Obsolete | 零件包装代码: | DO-35 |
包装说明: | O-XALF-W2 | 针数: | 2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.50 | 风险等级: | 5.63 |
外壳连接: | ISOLATED | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | ZENER DIODE |
最大动态阻抗: | 10 Ω | JEDEC-95代码: | DO-35 |
JESD-30 代码: | O-XALF-W2 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 100 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | ROUND | 封装形式: | LONG FORM |
最大功率耗散: | 0.5 W | 认证状态: | Not Qualified |
标称参考电压: | 6.2 V | 子类别: | Voltage Reference Diodes |
表面贴装: | NO | 技术: | ZENER |
端子面层: | TIN LEAD | 端子形式: | WIRE |
端子位置: | AXIAL | 电压温度Coeff-Max: | 0.124 mV/ °C |
工作测试电流: | 7.5 mA | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
1N825AT/R | NXP |
获取价格 |
DIODE 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-34, HERMETIC SEALED, GLASS PACKAGE-2, Vo | |
1N825ATA | MOTOROLA |
获取价格 |
Zener Diode, 6.2V V(Z), 5%, 0.4W, Silicon | |
1N825ATR | MICROSEMI |
获取价格 |
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated | |
1N825ATR-1 | MICROSEMI |
获取价格 |
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated | |
1N825ATR-1-1 | MICROSEMI |
获取价格 |
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated | |
1N825ATR-1-2 | MICROSEMI |
获取价格 |
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated | |
1N825ATR-2 | MICROSEMI |
获取价格 |
6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated | |
1N825AUR | MICROSEMI |
获取价格 |
6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes | |
1N825AUR-1 | MICROSEMI |
获取价格 |
6.2 & 6.55 Volt Temperature Compensated Surface Mount Zener Reference Diodes | |
1N825AUR-1% | MICROSEMI |
获取价格 |
6.2V, SILICON, VOLTAGE REFERENCE DIODE, DO-213AA, HERMETIC SEALED, GLASS PACKAGE-2 |