Datasheet > 1N8255SMSS

1N8255SMSS

更新时间： 2024-10-31 00:51:15

品牌	Logo	应用领域
SSDI		快速恢复二极管
页数	文件大小	规格书
2页	119K
描述
4 - 6 AMP SUBMINIATURE HYPERFAST RECOVERY RECTIFIER 100 - 200 VOLTS 30 nsec

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1N8255SMSS 数据手册

1N8255 – 1N8257

Series

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

4 - 6 AMP

SUBMINIATURE

HYPERFAST RECOVERY

Designer’s Data Sheet

Part Number/Ordering Information ^1/

1N82

__ __

RECTIFIER

100 - 200 VOLTS

30 nsec

│

└

│

└

Screening

__ = Not Screened

TX = TX Level

TXV = TXV

S = S Level

FEATURES:

Package Type



Hyper Fast Reverse Recovery: 30 nsec Max

PIV to 200 Volts

Hermetically Sealed

__ = Axial Leaded

SMS = Surface Mount Square Tab

ASMS = Surface Mount Square Tab

(Short Tab Version)

Low Reverse Leakage

Void Free Ceramic Frit Glass Construction

For High Efficiency Applications

Available in Axial, Square Tab, and Square Tab

(Short Tab) Versions

Voltage/Family

55 = 100 V

56 = 150 V

57 = 200 V



TX, TXV, and S-Level Screening Available^2/

Alternative to 1N5807, US thru 1N5811, US

JAN, JANTX, JANTXV, and JANS Qualifications

Available per MIL-PRF-19500/774

MAXIMUM RATINGS ^3/

SYMBOL

VALUE UNIT

1N8255

1N8256

1N8257

V_RRM

V_RWM

V_R

100

150

200

Peak Repetitive Reverse Voltage

and DC Blocking Voltage

Volts

Axial Lead, T_L< +55°C

SMS, T_EC< +125°C

ASMS, T_EC< +135°C

Average Rectified Forward Current

(Resistive Load, 60Hz, Sine Wave)

I_O

Amps

Peak Surge Current

1N8255 - 1N8256

1N8257

180

160

I_FSM

Amps

°C

(8.3 ms pulse, half sine wave superimposed on Io, allow

junction to reach equilibrium between pulses, T_A= 25°C)

T_J& T_STG-65 to +175

Operating & Storage Temperature

R_θJL

R_θJE

8.5

6.5

Junction to Lead for Axial, L =.375"

Junction to End Tab for SMS

Junction to End Tab for ASMS

°C/W

Thermal Resistance

NOTES:

Axial Leaded (__)

Surface Mount

Square Tab

(SMS / ASMS)

1/ For ordering information, price, operating curves, and availability - contact factory.

2/ Screening based on MIL-PRF-19500. Screening flows available on request.

3/ Unless otherwise specified, all electrical characteristics @25ºC.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RC0169C

DOC

中文翻译

下载PDF

与1N8255SMSS相关器件

型号	品牌	获取价格	描述	数据表
1N8255SMSTX	SSDI	获取价格	4 - 6 AMP SUBMINIATURE HYPERFAST RECOVERY RECTIFIER 100 - 200 VOLTS 30 nsec
1N8255SMSTXV	SSDI	获取价格	4 - 6 AMP SUBMINIATURE HYPERFAST RECOVERY RECTIFIER 100 - 200 VOLTS 30 nsec
1N8256	SSDI	获取价格	4 - 6 AMP SUBMINIATURE HYPERFAST RECOVERY RECTIFIER 100 - 200 VOLTS 30 nsec
1N8256ASMS	SSDI	获取价格	6 A, 150 V Subminiature Hyperfast Recovery Rectifier
1N8256FL	SSDI	获取价格	4 A, 150 V Subminiature Hyperfast Recovery Rectifier
1N8256SMS	SSDI	获取价格	6 A, 150 V Subminiature Hyperfast Recovery Rectifier
1N8256SMSS	SSDI	获取价格	4 - 6 AMP SUBMINIATURE HYPERFAST RECOVERY RECTIFIER 100 - 200 VOLTS 30 nsec
1N8256SMSTX	SSDI	获取价格	4 - 6 AMP SUBMINIATURE HYPERFAST RECOVERY RECTIFIER 100 - 200 VOLTS 30 nsec
1N8256SMSTXV	SSDI	获取价格	4 - 6 AMP SUBMINIATURE HYPERFAST RECOVERY RECTIFIER 100 - 200 VOLTS 30 nsec
1N8257	SSDI	获取价格	4 - 6 AMP SUBMINIATURE HYPERFAST RECOVERY RECTIFIER 100 - 200 VOLTS 30 nsec

与1N8255SMSS相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

19
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

20
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

45
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

52

产品中心

服务支持

精选活动

关于我们

帮助中心

1N8255SMSS

1N8255SMSS 数据手册

与1N8255SMSS相关器件

与1N8255SMSS相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1N8255SMSS

1N8255SMSS 数据手册

与1N8255SMSS相关器件

与1N8255SMSS相关文章

您还可以找

您在本页遇到什么问题？