5秒后页面跳转
1N825 PDF预览

1N825

更新时间: 2024-11-29 20:30:31
品牌 Logo 应用领域
DIGITRON 测试二极管
页数 文件大小 规格书
2页 235K
描述
Temperature Compensated Zener Diode; Max Peak Repetitive Reverse Voltage: 5.9; Max TMS Bridge Input Voltage: 6.2; Max DC Reverse Voltage: 6.5; Capacitance: 0.002; Package: DO-35

1N825 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:O-XALF-W2Reach Compliance Code:unknown
风险等级:5.68外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJEDEC-95代码:DO-7
JESD-30 代码:O-XALF-W2JESD-609代码:e0
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
封装主体材料:UNSPECIFIED封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.5 W标称参考电压:6.2 V
表面贴装:NO技术:ZENER
端子面层:TIN LEAD端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
电压温度Coeff-Max:0.124 mV/ °C最大电压容差:4.84%
Base Number Matches:1

1N825 数据手册

 浏览型号1N825的Datasheet PDF文件第2页 
1N821-1N829A  
TEMPERATURE COMPENSATED ZENER  
REFERENCE DIODE  
High-reliability discrete products  
and engineering services since 1977  
FEATURES  
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.  
MAXIMUM RATINGS  
Operating and storage temperature range  
-65°C to +175°C  
500mW @ TL = 25°C and maximum current lZM OF 70mA.  
For optimum voltage-temperature stability, lZ = 7.5mA  
(less than 50 mW in dissipated power)  
DC power dissipation  
Solder temperatures  
260°C for 10 s (max)  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Voltage temperature  
stability  
(ΔVZT MAX)  
-55°C to = 100°C  
(Note 3 and 4)  
Maximum  
reverse  
current  
lR @ 3V  
Effective  
temperature  
coefficient  
αVZ  
Maximum zener  
impedance  
(Note 2)  
Zener Test  
Current  
lZT  
Part number  
Zener voltage  
(Note 1 and 4)  
VZ @ lZT  
ZZT @ lZT  
VOLTS  
5.9-6.5  
5.9-6.5  
5.9-6.5  
5.9-6.5  
5.9-6.5  
5.9-6.5  
5.9-6.5  
5.9-6.5  
6.2-6.9  
5.9-6.5  
5.9-6.5  
6.2-6.9  
5.9-6.5  
5.9-6.5  
mA  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
7.5  
OHMS  
15  
μA  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
mV  
96  
96  
96  
48  
48  
48  
19  
19  
20  
9
%/°C  
0.01  
1N821  
1N821A  
1N822†  
1N823  
10  
0.01  
15  
0.01  
15  
0.005  
0.005  
0.005  
0.002  
0.002  
0.002  
0.001  
0.001  
0.001  
0.0005  
0.0005  
1N823A  
1N824†  
1N825  
10  
15  
15  
1N825A  
1N826  
10  
15  
1N827  
15  
1N827A  
1N828  
10  
9
15  
10  
5
1N829  
15  
1N829A  
10  
5
Double Anode; electrical specifications apply under both bias polarities.  
NOTES:  
1.  
2.  
3.  
Add a “-1” suffix for internal metallurgical bond.  
Zener impedance measured by superimposing 0.75 mA ac rms on 7.5mA dc @ 25°C.  
The maximum allowable change observed over the entire temperature range, i.e. the diode voltage will not exceed the specified mV change at  
discrete temperature between the established limits.  
4.  
Voltage measurements to be performed 15 seconds after application of dc current.  
Rev. 20160114  

与1N825相关器件

型号 品牌 获取价格 描述 数据表
1N825(DO35) ETC

获取价格

0TC Reference Voltage Zener
1N825(DO35)E3 MICROSEMI

获取价格

Zener Diode, 6.2V V(Z), 5%, 0.5W, Silicon, DO-35, DO-35, 2 PIN
1N825/A52R ETC

获取价格

IC-6.2V REFERENCE
1N825-1 MICROSEMI

获取价格

6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES
1N825-1(DO35) ETC

获取价格

0TC Reference Voltage Zener
1N825-1-1 MICROSEMI

获取价格

6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated
1N825-1-1% MICROSEMI

获取价格

暂无描述
1N825-1-1%E3 MICROSEMI

获取价格

Zener Diode
1N825116 NXP

获取价格

DIODE 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-34, Voltage Reference Diode
1N825-1-2 MICROSEMI

获取价格

6.2 & 6.55 Volt Temperature Compensated 6.2 & 6.55 Volt Temperature Compensated