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1N6749R PDF预览

1N6749R

更新时间: 2024-09-16 19:02:31
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
1页 126K
描述
Trans Voltage Suppressor Diode, 5000W, 80V V(RWM), Unidirectional, 1 Element, Silicon, SLUGGER PACKAGE-1

1N6749R 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:O-XXSO-G1
针数:1Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.92配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:O-XXSO-G1JESD-609代码:e0
最大非重复峰值反向功率耗散:5000 W元件数量:1
端子数量:1封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
认证状态:Not Qualified最大重复峰值反向电压:80 V
表面贴装:YES技术:AVALANCHE
端子面层:TIN LEAD端子形式:GULL WING
端子位置:UNSPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

1N6749R 数据手册

  

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