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1N6762 PDF预览

1N6762

更新时间: 2024-11-28 20:22:47
品牌 Logo 应用领域
美高森美 - MICROSEMI 超快恢复二极管快速恢复二极管局域网功率超快恢复二极管
页数 文件大小 规格书
2页 95K
描述
Rectifier Diode, 1 Phase, 2 Element, 12A, 50V V(RRM), Silicon, TO-254AA, TO-254AA, 3 PIN

1N6762 技术参数

是否Rohs认证: 不符合生命周期:Active
零件包装代码:TO-254AA包装说明:TO-254AA, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.4应用:POWER
外壳连接:ISOLATED配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-254AAJESD-30 代码:S-PSFM-P3
最大非重复峰值正向电流:165 A元件数量:2
相数:1端子数量:3
最大输出电流:12 A封装主体材料:PLASTIC/EPOXY
封装形状:SQUARE封装形式:FLANGE MOUNT
认证状态:Not Qualified最大重复峰值反向电压:50 V
最大反向恢复时间:0.035 µs表面贴装:NO
端子形式:PIN/PEG端子位置:SINGLE
Base Number Matches:1

1N6762 数据手册

 浏览型号1N6762的Datasheet PDF文件第2页 
TECHNICAL DATA SHEET  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803  
Website: http://www.microsemi.com  
DUAL ULTRAFAST POWER RECTIFIER  
Qualified per MIL-PRF-19500/642  
DEVICES  
LEVELS  
JAN  
JANTX  
JANTXV  
1N6762  
1N6763  
1N6764  
1N6765  
1N6762R  
1N6763R  
1N6764R  
1N6765R  
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)  
Parameters / Test Conditions  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
1N6762, R  
50  
100  
150  
200  
12  
1N6763, R  
1N6764, R  
1N6765, R  
TC = +100°C  
VRWM  
Vdc  
Average Forward Current (1)  
Peak Surge Forward Current  
IF  
Adc  
TO-254  
IFSM  
Rθjc  
165  
2.0  
A(pk)  
°C/W  
Thermal Resistance - Junction to Case  
Note:  
(1) Derate @ 240mA/°C above TC = 100°C  
(2) Each individual diode  
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)  
Parameters / Test Conditions  
Symbol  
Min.  
Max.  
Unit  
1N6762, R  
50  
Breakdown Voltage (2)  
IR = 10µAdc  
1N6763, R  
1N6764, R  
1N6765, R  
100  
150  
200  
VBR  
Vdc  
Forward Voltage (2)  
IF = 6Adc  
IF = 12Adc  
VF1  
VF2  
0.95  
1.05  
Vdc  
Reverse Leakage Current  
VR = 50V  
VR = 100V  
VR = 150V  
VR = 200V  
1N6762, R  
1N6763, R  
1N6764, R  
1N6765, R  
IR1  
10  
µAdc  
Reverse Leakage Current  
VR = 50V  
VR = 100V  
VR = 150V  
VR = 200V  
TA = 100°C  
1N6762, R  
1N6763, R  
1N6764, R  
1N6765, R  
TA = 100°C  
TA = 100°C  
TA = 100°C  
IR2  
500  
µAdc  
Reverse Recovery Time  
IF = 1.0A, di/dt = 50A/µs  
trr  
35  
nS  
pF  
Junction Capacitance  
VR = 5Vdc, f = 1.0MHz  
CJ  
300  
T4-LDS-0172 Rev. 1 (101036)  
Page 1 of 2  

1N6762 替代型号

型号 品牌 替代类型 描述 数据表
1N6765 MICROSEMI

完全替代

暂无描述
1N6764 MICROSEMI

完全替代

Rectifier Diode, 1 Phase, 2 Element, 12A, 150V V(RRM), Silicon, TO-254AA, TO-254AA, 3 PIN
1N6763 MICROSEMI

完全替代

Rectifier Diode, 1 Phase, 2 Element, 12A, 100V V(RRM), Silicon, TO-254AA, TO-254AA, 3 PIN

与1N6762相关器件

型号 品牌 获取价格 描述 数据表
1N6762R ETC

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JANTX, JANTXV POWER DUAL RECTIFIERS IN A TO-254AA PACKAGE QUALIFIED TO MIL-PRF-19500/642
1N6762RPBF INFINEON

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Rectifier Diode, 1 Phase, 2 Element, 12A, Silicon, TO-254AA, HERMETIC SEALED, TO-254AA, 3
1N6763 MICROSEMI

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Rectifier Diode, 1 Phase, 2 Element, 12A, 100V V(RRM), Silicon, TO-254AA, TO-254AA, 3 PIN
1N6763R MICROSEMI

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Rectifier Diode, 1 Phase, 2 Element, 12A, 100V V(RRM), Silicon, TO-254AA, TO-254AA, 3 PIN
1N6764 MICROSEMI

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Rectifier Diode, 1 Phase, 2 Element, 12A, 150V V(RRM), Silicon, TO-254AA, TO-254AA, 3 PIN
1N6764PBF INFINEON

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Rectifier Diode, 1 Phase, 2 Element, 12A, Silicon, TO-254AA, HERMETIC SEALED, TO-254AA, 3
1N6764R MICROSEMI

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Rectifier Diode, 1 Phase, 2 Element, 12A, 150V V(RRM), Silicon, TO-254AA, TO-254AA, 3 PIN
1N6765 MICROSEMI

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暂无描述
1N6765PBF INFINEON

获取价格

Rectifier Diode, 1 Phase, 2 Element, 12A, Silicon, TO-254AA, HERMETIC SEALED, TO-254AA, 3
1N6765R MICROSEMI

获取价格

Rectifier Diode, 1 Phase, 2 Element, 12A, 200V V(RRM), Silicon, TO-254AA, TO-254AA, 3 PIN