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1N6716GE3 PDF预览

1N6716GE3

更新时间: 2024-09-17 09:58:39
品牌 Logo 应用领域
美高森美 - MICROSEMI 超快恢复二极管快速恢复二极管
页数 文件大小 规格书
1页 119K
描述
Rectifier Diode, 1 Phase, 40A, Silicon, X-STRAP

1N6716GE3 技术参数

生命周期:ObsoleteReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.84应用:ULTRA FAST RECOVERY
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大非重复峰值正向电流:300 A相数:1
最大输出电流:40 A最大反向恢复时间:0.08 µs
Base Number Matches:1

1N6716GE3 数据手册

  

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