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1N6725E3 PDF预览

1N6725E3

更新时间: 2024-11-06 21:04:51
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
1页 130K
描述
Trans Voltage Suppressor Diode, 5000W, 13.6V V(RWM), Bidirectional, 1 Element, Silicon, SLUGGER PACKAGE-1

1N6725E3 技术参数

生命周期:Obsolete包装说明:O-XXSO-G1
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.84
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:O-XXSO-G1
最大非重复峰值反向功率耗散:5000 W元件数量:1
端子数量:1封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:SMALL OUTLINE
极性:BIDIRECTIONAL最大重复峰值反向电压:13.6 V
表面贴装:YES技术:AVALANCHE
端子形式:GULL WING端子位置:UNSPECIFIED
Base Number Matches:1

1N6725E3 数据手册

  

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