5秒后页面跳转
捷配首页

Datasheet > 1N6622E3
1N6622E3 PDF预览

1N6622E3

更新时间： 2024-11-17 14:50:55
品牌 Logo 应用领域
美高森美 - MICROSEMI 超快恢复二极管快速恢复二极管
页数 文件大小 规格书
4页 327K
描述
Rectifier Diode, 1 Phase, 1 Element, 1.2A, Silicon, ROHS COMPLIANT, HERMETIC SEALED, GLASS, A, 2 PIN

阅读下载

中文翻译

获取价格

1N6622E3 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active包装说明：O-LALF-W2
针数：2Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.21Is Samacsys：N
其他特性：HIGH RELIABILITY, METALLURGICALLY BONDED应用：ULTRA FAST RECOVERY
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JESD-30 代码：O-LALF-W2JESD-609代码：e3
最大非重复峰值正向电流：20 A元件数量：1
相数：1端子数量：2
最大输出电流：1.2 A封装主体材料：GLASS
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
最大重复峰值反向电压：600 V最大反向恢复时间：0.045 µs
表面贴装：NO端子面层：Matte Tin (Sn)
端子形式：WIRE端子位置：AXIAL
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

1N6622E3 数据手册

 浏览型号1N6622E3的Datasheet PDF文件第2页浏览型号1N6622E3的Datasheet PDF文件第3页浏览型号1N6622E3的Datasheet PDF文件第4页 
1N6620 thru 1N6625  
VOIDLESS-HERMETICALLY SEALED  
ULTRA FAST RECOVERY GLASS  
RECTIFIERS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-  
19500/585 and is ideal for high-reliability applications where a failure cannot be  
tolerated. These industry-recognized 1.5 to 2.0 Amp rated rectifiers for working  
peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-  
glass construction using an internal “Category I” metallurgical bond. These devices  
are also available in surface mount MELF package configurations by adding a “US”  
suffix (see separate data sheet for 1N6620US thru 1N6625US). Microsemi also  
offers numerous other rectifier products to meet higher and lower current ratings  
with various recovery time speed requirements including standard, fast and ultrafast  
device types in both through-hole and surface mount packages.  
Package “A”  
Axial  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
•
•
•
•
Popular JEDEC registered 1N6620 to 1N6625 series  
Voidless hermetically sealed glass package  
Extremely robust construction  
•
•
•
Ultrafast recovery rectifier series 200 to 1000 V  
Military and other high-reliability applications  
Switching power supplies or other applications  
requiring extremely fast switching & low forward  
loss  
High forward surge current capability  
Low thermal resistance  
Triple-layer passivation  
Internal “Category I” Metallurgical bonds  
•
•
•
JAN, JANTX, and JANTXV available per MIL-PRF-  
19500/585  
Controlled avalanche with peak reverse power  
capability  
•
•
Further options for screening in accordance with  
MIL-PRF-19500 for JANS by using a “SP” prefix, e.g.  
SP6620, SP6624, etc.  
•
Inherently radiation hard as described in Microsemi  
MicroNote 050  
Surface mount equivalents also available in a square  
end-cap MELF configuration with “US” suffix (see  
separate data sheet for 1N6620US thru 1N6625US)  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
•
•
Junction Temperature: -65oC to +150oC  
Storage Temperature: -65oC to +175oC  
•
•
CASE: Hermetically sealed voidless hard glass  
with Tungsten slugs  
Peak Forward Surge Current @ 25oC: 20 Amps  
(except 1N6625 which is 15 Amps)  
TERMINATIONS: Axial-leads are Copper with  
Tin/Lead (Sn/Pb) finish  
•
•
•
•
•
MARKING: Body painted and part number, etc.  
POLARITY: Cathode indicated by band  
Tape & Reel option: Standard per EIA-296  
Weight: 340 mg  
Note: Test pulse = 8.3 ms, half-sine wave.  
•
Average Rectified Forward Current (IO) at TL= +55oC  
(L=.375 inch from body):  
1N6620 thru 1N6622: 2.0 Amps  
1N6623 thru 1N6625: 1.5 Amps  
(Derate linearly at 0.833%/oC for TL> +55oC)  
Average Rectified Forward Current (IO) at TA=25oC:  
1N6620 thru 1N6622: 1.2 Amps  
See package dimensions on last page  
•
1N6623 thru 1N6625: 1.0 Amp  
(Derate linearly at 0.67%/ oC for TA>+25oC. This IO  
rating is typical for PC boards where thermal  
resistance from mounting point to ambient is  
sufficiently controlled where TJ(max) is not exceeded.)  
•
•
•
Thermal Resistance L= 0.375 inch (RθJL): 38oC/W  
Capacitance at VR= 10 V: 10 pF  
Solder temperature: 260oC for 10 s (maximum)  
Copyright © 2009  
10-06-2009 REV C; SA7-55.pdf  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
1234

中文翻译

下载PDF

1N6622E3 替代型号

型号 品牌 替代类型 描述 数据表
JANTX1N6622 MICROSEMI

功能相似

 Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.2A, 600V V(RRM), Silicon, DO-41, HERMETI
JANTXV1N6622 MICROSEMI

功能相似

 Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.2A, 600V V(RRM), Silicon, DO-41, HERMETI
1N6622 MICROSEMI

功能相似

 RECOVERY GLASS RECTIFIERS

与1N6622E3相关器件

型号 品牌 获取价格 描述 数据表
1N6622U SENSITRON

获取价格

 		Ultrafast Recovery Rectifier
1N6622US SENSITRON

获取价格

 		Ultrafast Recovery Rectifier
1N6622US MICROSEMI

获取价格

 		RECOVERY GLASS RECTIFIERS
1N6622V SENSITRON

获取价格

 		Rectifier Diode, 1 Phase, 1 Element, 2A, Silicon,
1N6623 MICROSEMI

获取价格

 		RECOVERY GLASS RECTIFIERS
1N6623 SEMTECH

获取价格

 		Axial Leaded Hermetically Sealed Ultra Fast Recovery Rectifier Diode
1N6623 SENSITRON

获取价格

 		Ultrafast Recovery Rectifier
1N6623U SENSITRON

获取价格

 		Ultrafast Recovery Rectifier
1N6623US SENSITRON

获取价格

 		Ultrafast Recovery Rectifier
1N6623US MICROSEMI

获取价格

 		RECOVERY GLASS RECTIFIERS

与1N6622E3相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证