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1N6621US/TR PDF预览

1N6621US/TR

更新时间： 2024-11-17 20:10:55
品牌 Logo 应用领域
美高森美 - MICROSEMI 超快恢复二极管快速恢复二极管局域网
页数 文件大小 规格书
4页 316K
描述
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.2A, 400V V(RRM), Silicon,

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1N6621US/TR 技术参数

是否Rohs认证： 不符合生命周期：Active
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.63
其他特性：HIGH RELIABILITY应用：ULTRA FAST RECOVERY
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：1.6 VJESD-30 代码：O-LELF-R2
最大非重复峰值正向电流：20 A元件数量：1
相数：1端子数量：2
最高工作温度：150 °C最低工作温度：-65 °C
最大输出电流：1.2 A封装主体材料：GLASS
封装形状：ROUND封装形式：LONG FORM
最大重复峰值反向电压：400 V最大反向电流：0.5 µA
最大反向恢复时间：0.045 µs表面贴装：YES
技术：AVALANCHE端子形式：WRAP AROUND
端子位置：ENDBase Number Matches：1

1N6621US/TR 数据手册

 浏览型号1N6621US/TR的Datasheet PDF文件第2页浏览型号1N6621US/TR的Datasheet PDF文件第3页浏览型号1N6621US/TR的Datasheet PDF文件第4页 
1N6620US thru 1N6625US  
VOIDLESS-HERMETICALLYSEALED  
SURFACE MOUNT ULTRA FAST  
RECOVERY GLASS RECTIFIERS  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-  
19500/585 and is ideal for high-reliability applications where a failure cannot be  
tolerated. These industry-recognized 1.5 to 2.0 Amp rated rectifiers for working  
peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-  
glass construction using an internal “Category I” metallurgical bond. These devices  
are also available in axial-leaded packages for thru-hole mounting (see separate  
data sheet for 1N6620 thru 1N6625). Microsemi also offers numerous other rectifier  
products to meet higher and lower current ratings with various recovery time speed  
requirements including standard, fast and ultrafast device types in both through-hole  
and surface mount packages.  
Package “A”  
or D-5A  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
Surface mount series equivalent to the JEDEC  
registered 1N6620 to 1N6625 series  
•
•
•
Ultrafast recovery rectifier series 200 to 1000 V  
Military and other high-reliability applications  
Switching power supplies or other applications  
requiring extremely fast switching & low forward  
loss  
High forward surge current capability  
Low thermal resistance  
•
•
•
•
•
Voidless hermetically sealed glass package  
Extremely robust construction  
Triple-layer passivation  
•
•
•
Internal “Category I” Metallurgical bonds  
JAN, JANTX, and JANTXV available per MIL-PRF-  
19500/585  
Controlled avalanche with peak reverse power  
capability  
•
•
Further options for screening in accordance with MIL-  
PRF-19500 for JANS by using a “SP” prefix, e.g.  
SP6620US, SP6624US, etc.  
•
Inherently radiation hard as described in Microsemi  
MicroNote 050  
Axial-leaded equivalents also available (see separate  
data sheet for 1N6620 thru 1N6625)  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
• Junction Temperature: -65oC to +150oC  
• Storage Temperature: -65oC to +175oC  
•
•
CASE: Hermetically sealed voidless hard glass  
with Tungsten slugs  
• Peak Forward Surge Current @ 25oC: 20 Amps (except  
TERMINATIONS: End caps are Copper with  
Tin/Lead (Sn/Pb) finish. Note: Previous inventory  
had solid Silver end caps with Tin/Lead plating.  
1N6625 which is 15 Amps)  
Note: Test pulse = 8.3 ms, half-sine wave.  
• Average Rectified Forward Current (IO) at TEC=+110oC:  
1N6620 thru 1N6622: 2.0 Amps  
•
•
•
•
•
MARKING: Cathode band only  
POLARITY: Cathode indicated by band  
Tape & Reel option: Standard per EIA-481-B  
Weight: 193 mg  
1N6623 thru 1N6625: 1.5 Amps  
(Derate linearly at 1.5%/oC for TEC > +110oC)  
• Average Rectified Forward Current (IO) at TA=25oC:  
1N6620 thru 1N6622: 1.2 Amps  
See package dimensions and recommended pad  
layout on last page  
1N6623 thru 1N6625: 1.0 Amp  
(Derate linearly at 0.67%/ oC for TA>+25oC. This IO  
rating is typical for PC boards where thermal resistance  
from mounting point to ambient is sufficiently controlled  
where TJ(max) is not exceeded.)  
• Thermal Resistance junction to endcap (RθJEC): 13oC/W  
• Capacitance at VR= 10 V: 10 pF  
• Solder temperature: 260oC for 10 s (maximum)  
Copyright © 2009  
10-06-2009 REV E; SD52A.pdf  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
1234

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