5秒后页面跳转
捷配首页

Datasheet > 1N6385-E3/54
1N6385-E3/54 PDF预览

1N6385-E3/54

更新时间： 2024-11-09 19:59:59
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管电视
页数 文件大小 规格书
5页 103K
描述
DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC, CASE 1.5KE, 2 PIN, Transient Suppressor

阅读下载

中文翻译

获取价格

1N6385-E3/54 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：O-PALF-W2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.54其他特性：EXCELLENT CLAMPING CAPABILITY
最小击穿电压：17.6 V击穿电压标称值：17.6 V
外壳连接：ISOLATED最大钳位电压：20.8 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码：O-PALF-W2
JESD-609代码：e3最大非重复峰值反向功率耗散：1500 W
元件数量：1端子数量：2
最高工作温度：175 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT APPLICABLE
极性：BIDIRECTIONAL最大功率耗散：6.5 W
认证状态：Not Qualified最大重复峰值反向电压：15 V
子类别：Transient Suppressors表面贴装：NO
技术：AVALANCHE端子面层：Matte Tin (Sn)
端子形式：WIRE端子位置：AXIAL
处于峰值回流温度下的最长时间：NOT APPLICABLEBase Number Matches：1

1N6385-E3/54 数据手册

 浏览型号1N6385-E3/54的Datasheet PDF文件第2页浏览型号1N6385-E3/54的Datasheet PDF文件第3页浏览型号1N6385-E3/54的Datasheet PDF文件第4页浏览型号1N6385-E3/54的Datasheet PDF文件第5页 
ICTE5 thru ICTE18C, 1N6373 thru 1N6386  
www.vishay.com  
Vishay General Semiconductor  
®
TRANSZORB Transient Voltage Suppressors  
FEATURES  
• Glass passivated chip junction  
• Available in uni-directional and bi-directional  
• 1500 W peak pulse power capability with a  
10/1000 μs waveform, repetitive rate (duty  
cycle): 0.01 %  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
Case Style 1.5KE  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• AEC-Q101 qualified  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
TYPICAL APPLICATIONS  
VWM  
5.0 V to 18 V  
6.0 V to 21.2 V  
9.2 V to 21.2 V  
1500 W  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, and telecommunication.  
VBR (uni-directional)  
V
BR (bi-directional)  
PPPM  
MECHANICAL DATA  
PD  
6.5 W  
Case: Molded epoxy body over passivated junction  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant and commercial grade  
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified  
(“X” denotes revision code e.g. A, B, ...)  
IFSM  
200 A  
TJ max.  
Polarity  
Package  
175 °C  
Uni-directional, bi-directional  
1.5KE  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
DEVICES FOR BI-DIRECTION APPLICATIONS  
meets JESD 201 class 2 whisker test  
For bi-directional types, use C suffix (e.g. ICTE18C).  
Electrical characteristics apply in both directions.  
Polarity: For uni-directional types the color band denotes  
cathode end, no marking on bi-directional types  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
PPPM  
IPPM  
LIMIT  
1500  
UNIT  
W
Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 1)  
Peak pulse current with a 10/1000 μs waveform (1) (fig. 3)  
Power dissipation on infinite heatsink at TL = 75 °C (fig. 8)  
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)  
Maximum instantaneous forward voltage at 100 A for uni-directional only  
Operating junction and storage temperature range  
See next table  
6.5  
A
PD  
W
IFSM  
200  
A
VF  
3.5  
V
TJ, TSTG  
-55 to +175  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
8.3 ms single half sine-wave, duty cycle = 4 pulses per minute maximum  
(2)  
Revision: 16-Jan-18  
Document Number: 88356  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345

中文翻译

下载PDF

1N6385-E3/54 替代型号

型号 品牌 替代类型 描述 数据表
1N6385HE3_A/C VISHAY

完全替代

 TVS DIODE 15V 21.4V 1.5KE
ICTE15CHE3_A/C VISHAY

类似代替

 Trans Voltage Suppressor Diode,

与1N6385-E3/54相关器件

型号 品牌 获取价格 描述 数据表
1N6385-E3/64 VISHAY

获取价格

 		DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Sup
1N6385-E3/66 VISHAY

获取价格

 		DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Sup
1N6385-E3/73 VISHAY

获取价格

 		DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Sup
1N6385-E3/74 VISHAY

获取价格

 		DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Sup
1N6385-E3/93 VISHAY

获取价格

 		DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Sup
1N6385HE3_A/C VISHAY

获取价格

 		TVS DIODE 15V 21.4V 1.5KE
1N6385HE3_A/D VISHAY

获取价格

 		TVS DIODE 15V 21.4V 1.5KE
1N6385RL4 MOTOROLA

获取价格

 		Trans Voltage Suppressor Diode, 1500W, Bidirectional, 1 Element, Silicon, PLASTIC, CASE 41
1N6385TR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 1500W, 15V V(RWM), Bidirectional, 1 Element, Silicon, PLAS
1N6386 MDE

获取价格

 		GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR

与1N6385-E3/54相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证