Datasheet > 1N6385-E3/93

1N6385-E3/93

更新时间： 2024-09-29 07:29:43

品牌	Logo	应用领域
威世 - VISHAY		电视
页数	文件大小	规格书
4页	62K
描述
DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Suppressor

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

1N6385-E3/93 数据手册

ICTE5.0 thru ICTE18C, 1N6373 thru 1N6378 & 1N6382 thru 1N6386

Vishay Semiconductors

formerly General Semiconductor

TRANSZORB^®Transient Voltage Suppressors

Stand Off Voltage 5.0 to 18V

Peak Pulse Power 1500W

Features

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

• Glass passivated junction

Case Style 1.5KE

•

1500W peak pulse power capabililty with a 10/1000µs

waveform, repetition rate (duty cycle): 0.05%

• Excellent clamping capability

• Low incremental surge resistance

• Very fast response time

1.0 (25.4)

MIN.

• Ideal for data and bus line applications

• High temperature soldering guaranteed:

265^OC/10 seconds, 0.375" (9.5mm) lead length,

5lbs. (2.3 kg) tension

0.210 (5.3)

0.190 (4.8)

DIA.

• Includes 1N6373 thru 1N6386

0.375 (9.5)

0.285 (7.2)

Mechanical Data

Case: Molded plastic body over passivated junction

Terminals: Plated axial leads, solderable per

MIL-STD-750, Method 2026

Polarity: For unidirectional types the color band

denotes the cathode, which is positive with respect

to the anode under normal TVS operation

1.0 (25.4)

MIN.

Mounting Position: Any

Weight: 0.045 oz., 1.2 g

0.042 (1.07)

0.038 (0.96)

DIA.

Packaging Codes – Options (Antistatic):

51 – 1K per Bulk box, 10K/carton

Dimensions in inches and (millimeters)

54 – 1.4K per 13" paper Reel

(52mm horiz. tape), 4.2K/carton

73 – 1K per horiz. tape & Ammo box, 10K/carton

Maximum Ratings and Thermal Characteristics(T_A= 25°C unless otherwise noted)

Parameter

Symbol

Limit

Minimum 1500

See Table 1 & 2

6.5

Unit

Peak pulse power dissipation

P_PPM

with a 10/1000µs waveform⁽¹⁾(Fig. 1)

Peak pulse current wih a 10/1000µs waveform⁽¹⁾(Fig. 3)

I_PPM

Steady state power dissipation,

T_L= 75^OC, at lead lengths 0.375” (9.5mm)

P_M(AV)

Peak forward surge current, 8.3ms single half sine-wave

unidirectional only⁽²⁾

I_FSM

200

Maximum instantaneous forward voltage

at 100A for unidirectional only

V_F

3.5

Operating junction and storage temperature range

T_J, T_STG

–55 to +175

^OC

Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above T_A= 25°C per Fig. 2

(2) 8.3ms single half sine-wave, duty cycle = 4 pulses per minute maximum

Document Number 88356

23-May-03

www.vishay.com

12 3 4

中文翻译

下载PDF

与1N6385-E3/93相关器件

型号	品牌	获取价格	描述	数据表
1N6385HE3_A/C	VISHAY	获取价格	TVS DIODE 15V 21.4V 1.5KE
1N6385HE3_A/D	VISHAY	获取价格	TVS DIODE 15V 21.4V 1.5KE
1N6385RL4	MOTOROLA	获取价格	Trans Voltage Suppressor Diode, 1500W, Bidirectional, 1 Element, Silicon, PLASTIC, CASE 41
1N6385TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 15V V(RWM), Bidirectional, 1 Element, Silicon, PLAS
1N6386	MDE	获取价格	GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
1N6386	VISHAY	获取价格	TRANSZORB® Transient Voltage Suppressors
1N6386	NJSEMI	获取价格	1500 WATT LOW CLAMPING FACTOF TRANSIENT VOLTAGE SUPPRESSO
1N6386	MOTOROLA	获取价格	Zener Transient Voltage Suppressors Unidirectional and Bidirectional
1N6386	FREESCALE	获取价格	Zener Transient Voltage Suppressors Unidirectional and Bidirectional
1N6386/51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 18V V(RWM), Bidirectional, 1 Element, Silicon, PLAS

与1N6385-E3/93相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

22
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

16
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

18
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

30

产品中心

服务支持

精选活动

关于我们

帮助中心

1N6385-E3/93

1N6385-E3/93 数据手册

与1N6385-E3/93相关器件

与1N6385-E3/93相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

1N6385-E3/93

1N6385-E3/93 数据手册

与1N6385-E3/93相关器件

与1N6385-E3/93相关文章

您还可以找

您在本页遇到什么问题？