Datasheet > 1N6386

1N6386

更新时间： 2024-11-09 06:23:07

品牌	Logo	应用领域
MDE		二极管局域网
页数	文件大小	规格书
2页	38K
描述
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR

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中文翻译

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数据手册

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1N6386 数据手册

MDE Semiconductor, Inc.

78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414

1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com

ICTE5.0 to ICTE15C MPTE-5 to MPTE-45

1N6373 to 1N6381 and 1N6382 to 1N6389

GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR

STANDOFF VOLTAGE- 5.0 to 45.0V

1500 Watt Peak Power

FEATURES

• Plastic package has Underwriters Laboratory

Flammability Classification 94 V-O

• Glass passivated chip junction in Molded Plastic package

• 1500W surge capability at 1ms

• Excellent clamping capability

• Low zener inpedance

• Fast response time: typically less than

1.0 ps from 0 volts to BV min.

• Typical IR less than 1µA above 10V

• High temperature soldering guaranteed:

250°C/10 seconds/ .375", (9.5mm) lead

length, 5lbs., (2.3kg) tension

• Includes 1N6373 thru 1N6385

MECHANICAL DATA

Case: JEDEC DO-201 Molded plastic

Terminals: Plated Axial leads, solderable per

MIL-STD-750, Method 2026

Polarity: Color band denoted positive end (cathode)

except Bipolar

Mounting Position: Any

Weight: 0.045 ounces, 1.2 grams

MAXIMUM RATINGS AND CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

RATING

SYMBOL

VALUE

Minimum 1500

SEE TABLE 1

5.0

UNITS

Watts

Amps

Watts

Peak Pulse Power Dissipation at TA = 25 °C, TP = 1ms

(NOTE 1)

P_PPM

I_PPM

Peak Pulse Current of on 10/1000 µs waveform (Note 1)

Steady State Power Dissipation at TL = 75°C

Lead lengths .375", 9.5mm (Note 2)

P_M(AV)

Peak Forward Surge Current, 8.3ms Single Half Sine-wave

Superimposed on Rated Load, (JEDEC Method)(Note 3)

I_FSM

200

Amps

Maximum instantaneous forward voltage at 100A for

unidirectional only

V_F

3.5

Volt

°C

Operatings and Storage Temperature Range

T_J, T_STG

-55 +175

NOTES:

1. Non-repetitive current pulse, per Fig.3 and derated above Ta=25 °C per Fig.2.

2. Mounted on Copper Pad area of 0.8x0.8" (20x20mm) per Fig.5.

3. 8.3ms single half sine-wave, or equivalent square wave, Duty cycle=4 pulses per minutes maximum.

Certified RoHS Compliant

UL File # E223026

中文翻译

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与1N6386相关器件

型号	品牌	获取价格	描述	数据表
1N6386/51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 18V V(RWM), Bidirectional, 1 Element, Silicon, PLAS
1N6386/51-E3	VISHAY	获取价格	DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Sup
1N6386/73	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 18V V(RWM), Bidirectional, 1 Element, Silicon, PLAS
1N6386/73-E3	VISHAY	获取价格	DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Sup
1N6386-E3/54	VISHAY	获取价格	TVS DIODE 18V 25.5V 1.5KE
1N6386-E3/73	VISHAY	获取价格	DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Sup
1N6386E3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 18V V(RWM), Bidirectional, 1 Element, Silicon, ROHS
1N6386HE3_A/C	VISHAY	获取价格	TVS DIODE 18V 25.5V 1.5KE
1N6386HE3_A/D	VISHAY	获取价格	TVS DIODE 18V 25.5V 1.5KE
1N6386RL4	MOTOROLA	获取价格	Trans Voltage Suppressor Diode, 1500W, Bidirectional, 1 Element, Silicon, PLASTIC, CASE 41

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