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1N6381

更新时间： 2024-11-30 22:37:43
品牌 Logo 应用领域
安森美 - ONSEMI 瞬态抑制器二极管局域网
页数 文件大小 规格书
8页 63K
描述
1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors

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中文翻译

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1N6381 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：O-PALF-W2针数：2
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.29
Is Samacsys：N其他特性：EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, LOW IMPEDANCE
最小击穿电压：52.9 V外壳连接：ISOLATED
最大钳位电压：70 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：O-PALF-W2JESD-609代码：e3
最大非重复峰值反向功率耗散：1500 W元件数量：1
端子数量：2封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：260极性：UNIDIRECTIONAL
最大功率耗散：5 W认证状态：Not Qualified
最大重复峰值反向电压：45 V子类别：Transient Suppressors
表面贴装：NO技术：ZENER
端子面层：Tin (Sn)端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：40
Base Number Matches：1

1N6381 数据手册

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1N6373 - 1N6381 Series  
(ICTE-5 - ICTE-36,  
MPTE-5 - MPTE-45)  
1500 Watt Peak Power  
Mosorb Zener Transient  
Voltage Suppressors  
http://onsemi.com  
Unidirectional*  
Cathode  
Anode  
Mosorb devices are designed to protect voltage sensitive  
components from high voltage, high–energy transients. They have  
excellent clamping capability, high surge capability, low zener  
impedance and fast response time. These devices are  
ON Semiconductor’s exclusive, cost-effective, highly reliable  
Surmetic axial leaded package and are ideally-suited for use in  
communication systems, numerical controls, process controls,  
medical equipment, business machines, power supplies and many  
other industrial/consumer applications, to protect CMOS, MOS and  
Bipolar integrated circuits.  
AXIAL LEAD  
CASE 41A  
PLASTIC  
L
MPTE  
–xx  
1N  
63xx  
YYWW  
Specification Features:  
• Working Peak Reverse Voltage Range – 5 V to 45 V  
• Peak Power – 1500 Watts @ 1 ms  
• ESD Rating of Class 3 (>16 KV) per Human Body Model  
• Maximum Clamp Voltage @ Peak Pulse Current  
• Low Leakage < 5 mA Above 10 V  
L
ICTE  
–xx  
YYWW  
L = Assembly Location  
MPTE–xx = ON Device Code  
ICTE–xx = ON Device Code  
1N63xx = JEDEC Device Code  
YY = Year  
• Response Time is Typically < 1 ns  
Mechanical Characteristics:  
CASE: Void-free, transfer-molded, thermosetting plastic  
FINISH: All external surfaces are corrosion resistant and leads are  
readily solderable  
WW = Work Week  
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:  
230°C, 1/16″ from the case for 10 seconds  
POLARITY: Cathode indicated by polarity band  
MOUNTING POSITION: Any  
ORDERING INFORMATION  
Device  
Package  
Shipping  
500 Units/Box  
MPTE–xx  
Axial Lead  
MAXIMUM RATINGS  
MPTE–xxRL4  
Axial Lead 1500/Tape & Reel  
Rating  
Symbol  
Value  
Unit  
ICTE–xx  
Axial Lead  
500 Units/Box  
Peak Power Dissipation (Note 1.)  
P
PK  
1500  
Watts  
@ T ≤ 25°C  
L
ICTE–xxRL4  
Axial Lead 1500/Tape & Reel  
Steady State Power Dissipation  
P
D
5.0  
Watts  
1N63xx  
Axial Lead  
500 Units/Box  
@ T ≤ 75°C, Lead Length = 3/8″  
L
Derated above T = 75°C  
20  
20  
mW/°C  
°C/W  
L
1N63xxRL4*  
Axial Lead 1500/Tape & Reel  
Thermal Resistance, Junction–to–Lead  
Forward Surge Current (Note 2.)  
R
I
q
JL  
NOTES:  
200  
Amps  
1. Nonrepetitive current pulse per Figure 5 and der-  
FSM  
ated above T = 25°C per Figure 2.  
@ T = 25°C  
A
A
2. 1/2 sine wave (or equivalent square wave), PW =  
8.3 ms, duty cycle = 4 pulses per minute maxi-  
mum.  
Operating and Storage  
Temperature Range  
T , T  
– 65 to  
+175  
°C  
J
stg  
*Please see 1N6382 – 1N6389 (ICTE–10C – ICTE–36C, MPTE–8C – MPTE–45C)  
for Bidirectional Devices  
*1N6378 Not Available in 1500/Tape & Reel  
Semiconductor Components Industries, LLC, 2002  
1
Publication Order Number:  
June, 2002 – Rev. 2  
1N6373/D  
12345678

中文翻译

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1N6381 替代型号

型号 品牌 替代类型 描述 数据表
1N6381G ONSEMI

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