Datasheet > 1N6381TR

1N6381TR

更新时间： 2024-11-15 07:16:23

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
3页	174K
描述
Trans Voltage Suppressor Diode, 1500W, 45V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC, CASE 1, 2 PIN

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1N6381TR 数据手册

1N6373 thru 1N6389, e3

or MPTE-5 thru MPTE-45C, e3

1500 WATT LOW CLAMPING FACTOR

TRANSIENT VOLTAGE SUPPRESSOR

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This Transient Voltage Suppressor (TVS) series for 1N6373 thru 1N6389

are JEDEC registered selections for both unidirectional and bidirectional

devices. The 1N6373 thru 1N6381 are unidirectional and the 1N6382 thru

1N6389 are bi-directional where they all provide a very low specified

clamping factor for minimal clamping voltages (V_C) above their respective

breakdown voltages (V_BR) as specified herein. They are most often used

in protecting sensitive components from inductive switching transients or

induced secondary lightning effects as found in lower surge levels of

IEC61000-4-5 . They are also very successful in protecting airborne

avionics and electrical systems. Since their response time is virtually

CASE 1

instantaneous, they can also protect from ESD and EFT per IEC61000-4-2

and IEC61000-4-4.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Unidirectional and bidirectional TVS series for thru-hole

mounting

• Designed to protect Bipolar and MOS

Microprocessor based systems.

•

Suppresses transients up to 1500 watts @ 10/1000 µs

• Protection from switching transients and induced RF

• ESD & EFT protection per IEC 61000-4-2 and -4-4

_clamping(0 volts to V_(BR)min):

Unidirectional – Less than 100 pico seconds.

Bidirectional – Less than 5 nano seconds.

• Secondary lightning protection per IEC61000-4-5

with 42 Ohms source impedance:

•

Working voltage (V_WM) range 5 V to 45 V

Class 1, 2 & 3 1N6356 to 1N6372

Class 4: 1N6356 to 1N6362

Low clamping factor (ratio of actual V_C/V_BR): 1.33 @ full

rated power and 1.20 @ 50% rated power

• Secondary lightning protection per IEC61000-4-5

•

Economical plastic encapsulated TVS for thru-hole mount

with 12 Ohms source impedance:

Options for screening in accordance with MIL-PRF-19500

for JAN, JANTX, and JANTXV are also available by

adding MQ, MX, or MV prefixes respectively to part

numbers, e.g. MX1N6373, etc.

Class 1 & 2: 1N6356 to 1N6372

Class 3: 1N6356 to 1N6362

Class 4: 1N6356 to 1N6358

• Secondary lightning protection per IEC61000-4-5

•

Surface mount equivalent packages also available as

SMCJ6373 – SMCJ6389 (consult factory for other

surface mount options)

with 2 Ohms source impedance:

Class 2: 1N6356 to 1N6361

Class 3: 1N6356 to 1N6358

•

RoHS Compliant devices available by adding “e3” suffix

Metal package axial-leaded equivalents available in the

1N6373 – 1N6389 series (see separate data sheet)

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

1500 Watts for 10/1000 μs with repetition rate of 0.01% or

• CASE: Void-free transfer molded thermosetting

less* at lead temperature (T_L) 25^oC (See Figs. 1, 2, & 4)

epoxy body meeting UL94V-0

•

Operating & Storage Temperatures: -65^oto +150^oC

• FINISH: Tin-Lead or RoHS Compliant annealed-

matte Tin plating solderable per MIL-STD-750

method 2026

Thermal Resistance: 22^ºC/W junction to lead at 3/8 inch

(10 mm) from body, or 82^ºC/W junction to ambient when

mounted on FR4 PC board with 4 mm²copper pads (1oz)

and track width 1 mm, length 25 mm

• POLARITY: Cathode indicated by band

• MARKING: Part number and polarity diode symbol

• WEIGHT: 1.5 grams. (Approx)

•

Steady-State Power dissipation*: 5 watts at T_L< 40^oC, or

1.52 watts at T_A= 25^ºC when mounted on FR4 PC board

described for thermal resistance

Solder Temperatures: 260 ^oC for 10 s (maximum)

• TAPE & REEL option: Standard per EIA-296 (add

“TR” suffix to part number)

• See “CASE 1” package dimension on last page

* TVS devices are not typically used for dc power dissipation and are instead operated at or less than their rated standoff voltage

(V_WM) except for transients that briefly drive the device into avalanche breakdown (V_BRto V_Cregion).

Microsemi

Page 1

10-09-2008 REVD

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3

中文翻译

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与1N6381TR相关器件

型号	品牌	获取价格	描述	数据表
1N6381TRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 45V V(RWM), Unidirectional,
1N6382	MOTOROLA	获取价格	Zener Transient Voltage Suppressors Unidirectional and Bidirectional
1N6382	FREESCALE	获取价格	Zener Transient Voltage Suppressors Unidirectional and Bidirectional
1N6382	MDE	获取价格	GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
1N6382	VISHAY	获取价格	TRANSZORB® Transient Voltage Suppressors
1N6382	NJSEMI	获取价格	1500 WATT LOW CLAMPING FACTOF TRANSIENT VOLTAGE SUPPRESSO
1N6382	PROTEC	获取价格	Trans Voltage Suppressor Diode, 1500W, Bidirectional, 1 Element, Silicon
1N6382/1	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1500W, 8V V(RWM), Bidirectional, 1 Element, Silicon, PLAST
1N6382/100-E3	VISHAY	获取价格	DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Sup
1N6382/4-E3	VISHAY	获取价格	DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, 1.5KE, 2 PIN, Transient Suppress

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