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1N6382/71 PDF预览

1N6382/71

更新时间： 2024-02-23 05:32:57
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
5页 96K
描述
Trans Voltage Suppressor Diode, 1500W, 8V V(RWM), Bidirectional, 1 Element, Silicon, PLASTIC, CASE 1.5KE, 2 PIN

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1N6382/71 技术参数

是否Rohs认证：不符合生命周期：Obsolete
包装说明：O-PALF-W2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.73
Is Samacsys：N其他特性：EXCELLENT CLAMPING CAPABILITY
最小击穿电压：9.4 V外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码：O-PALF-W2
JESD-609代码：e0最大非重复峰值反向功率耗散：1500 W
元件数量：1端子数量：2
最高工作温度：175 °C最低工作温度：-55 °C
封装主体材料：PLASTIC/EPOXY封装形状：ROUND
封装形式：LONG FORM峰值回流温度（摄氏度）：NOT SPECIFIED
极性：BIDIRECTIONAL最大功率耗散：6.5 W
认证状态：Not Qualified最大重复峰值反向电压：8 V
表面贴装：NO技术：AVALANCHE
端子面层：TIN LEAD端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

1N6382/71 数据手册

 浏览型号1N6382/71的Datasheet PDF文件第2页浏览型号1N6382/71的Datasheet PDF文件第3页浏览型号1N6382/71的Datasheet PDF文件第4页浏览型号1N6382/71的Datasheet PDF文件第5页 
ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386  
Vishay General Semiconductor  
TRANSZORB® Transient Voltage Suppressors  
FEATURES  
• Glass passivated chip junction  
• Available in uni-directional and bi-directional  
• 1500 W peak pulse power capability with a  
10/1000 µs waveform, repetitive rate (duty cycle):  
0.01 %  
• Excellent clamping capability  
• Very fast response time  
Case Style 1.5KE  
• Low incremental surge resistance  
• Solder dip 260 °C, 40 seconds  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
PRIMARY CHARACTERISTICS  
TYPICAL APPLICATIONS  
VWM  
PPPM  
PD  
5.0 V to 18 V  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching  
and lighting on ICs, MOSFET, signal lines of sensor  
units for consumer, computer, industrial and  
telecommunication.  
1500 W  
6.5 W  
IFSM  
200 A  
TJ max.  
175 °C  
MECHANICAL DATA  
Case: Molded epoxy body over passivated junction  
Epoxy meets UL 94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
DEVICES FOR BI-DIRECTION APPLICATIONS  
For bi-directional types, use C suffix (e.g. ICTE-18C).  
Electrical characteristics apply in both directions.  
Polarity: For uni-directional types the color band  
denotes cathode end, no marking on bi-directional  
types  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
PPPM  
IPPM  
LIMIT  
1500  
UNIT  
W
Peak pulse power dissipation with a 10/1000 µs waveform (1) (Fig. 1)  
Peak pulse current with a 10/1000 µs waveform (1) (Fig. 3)  
Power dissipation on infinite heatsink at TL = 75 °C (Fig. 8)  
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)  
Maximum instantaneous forward voltage at 100 A for uni-directional only  
Operating junction and storage temperature range  
See next table  
6.5  
A
PD  
W
IFSM  
200  
A
VF  
3.5  
V
TJ, TSTG  
- 55 to + 175  
°C  
Notes:  
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2  
(2) 8.3 ms single half sine-wave, duty cycle = 4 pulses per minute maximum  
www.vishay.com  
116  
Document Number: 88356  
Revision: 04-Sep-07  
12345

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1N6382/72-E3 VISHAY DIODE 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC, CASE 1.5KE, 2 PIN, Transient Sup

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