1N6381G

更新时间： 2024-02-12 20:36:26

品牌	Logo	应用领域
安森美 - ONSEMI		瞬态抑制器二极管
页数	文件大小	规格书
8页	80K
描述
1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors

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技术参数
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1N6381G 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.77	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
Base Number Matches：	1

1N6381G 数据手册

1N6373 − 1N6381 Series

(ICTE−5 − ICTE−36,

MPTE−5 − MPTE−45)

1500 Watt Peak Power

Mosorbt Zener Transient

Voltage Suppressors

http://onsemi.com

Unidirectional*

Cathode

Anode

Mosorb devices are designed to protect voltage sensitive

components from high voltage, high−energy transients. They have

excellent clamping capability, high surge capability, low zener

impedance and fast response time. These devices are

ON Semiconductor’s exclusive, cost-effective, highly reliable

Surmetict axial leaded package and are ideally-suited for use in

communication systems, numerical controls, process controls,

medical equipment, business machines, power supplies and many

other industrial/consumer applications, to protect CMOS, MOS and

Bipolar integrated circuits.

AXIAL LEAD

CASE 41A

PLASTIC

MARKING DIAGRAMS

MPTE

−xx

63xx

YYWWG

Specification Features

• Working Peak Reverse Voltage Range − 5.0 V to 45 V

• Peak Power − 1500 Watts @ 1 ms

ICTE

−xx

• ESD Rating of Class 3 (>16 KV) per Human Body Model

• Maximum Clamp Voltage @ Peak Pulse Current

• Low Leakage < 5 mA Above 10 V

YYWWG

= Assembly Location

• Response Time is Typically < 1 ns

• Pb−Free Packages are Available*

MPTE−xx = ON Device Code

1N63xx = JEDEC Device Code

ICTE−xx = ON Device Code

Mechanical Characteristics

= Year

= Work Week

= Pb−Free Package

CASE: Void-free, transfer-molded, thermosetting plastic

FINISH: All external surfaces are corrosion resistant and leads are

readily solderable

(Note: Microdot may be in either location)

MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:

230°C, 1/16″ from the case for 10 seconds

ORDERING INFORMATION

POLARITY: Cathode indicated by polarity band

MOUNTING POSITION: Any

†

Device

Package

Shipping

MPTE−xx, G

Axial Lead

(Pb−Free)

500 Units/Box

MPTE−xxRL4, G

ICTE−xx, G

Axial Lead 1500/Tape & Reel

(Pb−Free)

Axial Lead

(Pb−Free)

500 Units/Box

ICTE−xxRL4, G

Axial Lead 1500/Tape & Reel

(Pb−Free)

1N63xx, G

Axial Lead

(Pb−Free)

500 Units/Box

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

1N63xxRL4, G

Axial Lead 1500/Tape & Reel

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

Publication Order Number:

December, 2005 − Rev. 4

1N6373/D

12 3 4 5 6 7 8

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与1N6381G相关器件

型号	品牌	描述	获取价格	数据表
1N6381LEADFREE	CENTRAL	Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon,	获取价格
1N6381RL4	ONSEMI	1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors	获取价格
1N6381RL4	MOTOROLA	Trans Voltage Suppressor Diode, 1500W, Unidirectional, 1 Element, Silicon, PLASTIC, CASE 4	获取价格
1N6381RL4G	ONSEMI	1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors	获取价格
1N6381TR	MICROSEMI	Trans Voltage Suppressor Diode, 1500W, 45V V(RWM), Unidirectional, 1 Element, Silicon, PLA	获取价格
1N6381TRE3	MICROSEMI	Trans Voltage Suppressor Diode, 45V V(RWM), Unidirectional,	获取价格

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