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1N6280CHE3/54 PDF预览

1N6280CHE3/54

更新时间: 2024-11-11 13:44:15
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
6页 99K
描述
Trans Voltage Suppressor Diode, 19.4V V(RWM), Bidirectional,

1N6280CHE3/54 技术参数

是否Rohs认证:符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.82
Is Samacsys:N击穿电压标称值:24 V
最大钳位电压:34.7 V二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-609代码:e3极性:BIDIRECTIONAL
最大重复峰值反向电压:19.4 V子类别:Transient Suppressors
表面贴装:NO端子面层:Matte Tin (Sn)
Base Number Matches:1

1N6280CHE3/54 数据手册

 浏览型号1N6280CHE3/54的Datasheet PDF文件第2页浏览型号1N6280CHE3/54的Datasheet PDF文件第3页浏览型号1N6280CHE3/54的Datasheet PDF文件第4页浏览型号1N6280CHE3/54的Datasheet PDF文件第5页浏览型号1N6280CHE3/54的Datasheet PDF文件第6页 
1.5KE6.8A thru 1.5KE540A, 1N6267A thru 1N6303A  
www.vishay.com  
Vishay General Semiconductor  
TransZorb® Transient Voltage Suppressors  
FEATURES  
Glass passivated chip junction  
• Available in uni-directional and bi-directional  
• 1500 W peak pulse power capability with a  
10/1000 μs waveform, repetitive rate (duty cycle):  
0.01 %  
• Excellent clamping capability  
• Very fast response time  
• Low incremental surge resistance  
• AEC-Q101 qualified  
Case Style 1.5KE  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
PRIMARY CHARACTERISTICS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, automotive, and telecommunication.  
VBR uni-directional  
VBR bi-directional  
PPPM  
6.8 V to 540 V  
6.8 V to 440 V  
1500 W  
6.5 W  
PD  
MECHANICAL DATA  
IFSM (uni-directional only)  
TJ max.  
200 A  
Case: Molded epoxy body over passivated junction  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS compliant, commercial grade  
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified  
175 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
DEVICES FOR BI-DIRECTION APPLICATIONS  
For bi-directional types, use  
1.5KE440CA)  
C or CA suffix (e.g.  
Note  
Eletrical characteristics apply in both directions.  
1.5KE250A to 1.5KE540A and 1.5KE250CA to 1.5KE440CA for  
commercial grade only  
Polarity: For uni-directional types the color band denotes  
cathode end, no marking on bi-directional types  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
PPPM  
IPPM  
VALUE  
1500  
UNIT  
W
Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 1)  
Peak pulse current with a 10/1000 μs waveform (1)  
See next table  
6.5  
A
Power dissipation on infinite heatsink at TL = 75 °C (fig. 5)  
Peak forward surge current 8.3 ms single half sine-wave uni-directional only  
Maximum instantaneous forward voltage at 100 A for uni-directional only (3)  
Operating junction and storage temperature range  
PD  
W
(2)  
IFSM  
200  
A
VF  
3.5/5.0  
V
TJ, TSTG  
- 55 to 175  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum  
VF = 3.5 V for 1.5KE220A and below; VF = 5.0 V for 1.5KE250A and above  
(2)  
(3)  
Revision: 22-Nov-11  
Document Number: 88301  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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